| Presentation | 2009-06-24 Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System Jae-Young PARK, Jong-Kyu SONG, Dae-Woo Kim, Chang-Soo JANG, Won-Young JUNG, Taek-Soo KIM, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We reported the characterization and the behavior of a Low Voltage Triggered SCR (LVTSCR) with vf-TLP (very-fast Transmission Line Pulse) measurements. The vf-TLP measured results showed that the triggering voltage (Vt1) decreased and the second breakdown current (It2) increased in the comparison with the standard 100ns TLP system. A series of experiments proved that it comes from the dV/dt effect and the power-to-failure versus pulse width relationship. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Electrostatic discharge (ESD) / Charged Device Model (CDM) / very-fast TLP testing / Low Voltage Triggered SCR (LVTSCR) |
| Paper # | ED2009-54,SDM2009-49 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System |
| Sub Title (in English) | |
| Keyword(1) | Electrostatic discharge (ESD) |
| Keyword(2) | Charged Device Model (CDM) |
| Keyword(3) | very-fast TLP testing |
| Keyword(4) | Low Voltage Triggered SCR (LVTSCR) |
| 1st Author's Name | Jae-Young PARK |
| 1st Author's Affiliation | Device Engineering Team, Technical Engineering Center() |
| 2nd Author's Name | Jong-Kyu SONG |
| 2nd Author's Affiliation | Device Engineering Team, Technical Engineering Center |
| 3rd Author's Name | Dae-Woo Kim |
| 3rd Author's Affiliation | Device Engineering Team, Technical Engineering Center |
| 4th Author's Name | Chang-Soo JANG |
| 4th Author's Affiliation | Device Engineering Team, Technical Engineering Center |
| 5th Author's Name | Won-Young JUNG |
| 5th Author's Affiliation | Device Engineering Team, Technical Engineering Center |
| 6th Author's Name | Taek-Soo KIM |
| 6th Author's Affiliation | Device Engineering Team, Technical Engineering Center |
| Date | 2009-06-24 |
| Paper # | ED2009-54,SDM2009-49 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |