| Presentation | 2009-06-24 Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit M. Kamiyanagi, F. Iga, S. Ikeda, K. Miura, J. Hayakawa, H. Hasegawa, T. Hanyu, H. Ohno, T. Endoh, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, it is shown that our fabricated MTJ of 60x180nm^2, which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14μm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with 10nsec sampling rate, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60x180nm^2 MTJ is less than 30ns with its programming current of 500μA and the resistance change of 1.7kΩ. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | spin-transfer torque random access memory (STT-RAM) / magnetoresistive random access memory (MRAM) / tunnel magnetoresistance (TMR) / spin-injection / magnetic tunnel junction (MTJ) / CMOS / MOSFET / transient characteristic |
| Paper # | ED2009-52,SDM2009-47 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit |
| Sub Title (in English) | |
| Keyword(1) | spin-transfer torque random access memory (STT-RAM) |
| Keyword(2) | magnetoresistive random access memory (MRAM) |
| Keyword(3) | tunnel magnetoresistance (TMR) |
| Keyword(4) | spin-injection |
| Keyword(5) | magnetic tunnel junction (MTJ) |
| Keyword(6) | CMOS |
| Keyword(7) | MOSFET |
| Keyword(8) | transient characteristic |
| 1st Author's Name | M. Kamiyanagi |
| 1st Author's Affiliation | Center for Interdisciplinary Research, Tohoku University() |
| 2nd Author's Name | F. Iga |
| 2nd Author's Affiliation | Center for Interdisciplinary Research, Tohoku University |
| 3rd Author's Name | S. Ikeda |
| 3rd Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | K. Miura |
| 4th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University:Hitachi Advanced Research Laboratory |
| 5th Author's Name | J. Hayakawa |
| 5th Author's Affiliation | Hitachi Advanced Research Laboratory |
| 6th Author's Name | H. Hasegawa |
| 6th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University |
| 7th Author's Name | T. Hanyu |
| 7th Author's Affiliation | Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University |
| 8th Author's Name | H. Ohno |
| 8th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University |
| 9th Author's Name | T. Endoh |
| 9th Author's Affiliation | Center for Interdisciplinary Research, Tohoku University |
| Date | 2009-06-24 |
| Paper # | ED2009-52,SDM2009-47 |
| Volume (vol) | vol.109 |
| Number (no) | 98 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |