Presentation | 2009-06-24 Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits Shoji IKEDA, Jun HAYAKAWA, Huadong GAN, Kotaro MIZUNUMA, Ji Ho PARK, Hiroyuki YAMAMOTO, Katsuya MIURA, Haruhiro HASEGAWA, Ryutaro SASAKI, Toshiyasu MEGURO, Kenchi ITO, Fumihiro MATSUKURA, Hideo OHNO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Magnetic tunnel junctions (MTJs) with highly oriented (001) MgO barrier/CoFeB ferromagnetic electrodes have attracted much interest because of the application to eco-friendly spin devices such as magnetoresisitive random access memories and nonvolatile logics with low-power consumption. We here describe giant tunnel magnetoresistance (TMR) ratio at room temperature (RT) and current-induced magnetization switching (CIMS) at relatively low critical current density J_C for the MgO barrier MTJs. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Tunnel magnetoresistance / current-induced magnetization switching / MgO / CoFeB / synthetic ferrimagnetic free layer |
Paper # | ED2009-51,SDM2009-46 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2009/6/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits |
Sub Title (in English) | |
Keyword(1) | Tunnel magnetoresistance |
Keyword(2) | current-induced magnetization switching |
Keyword(3) | MgO |
Keyword(4) | CoFeB |
Keyword(5) | synthetic ferrimagnetic free layer |
1st Author's Name | Shoji IKEDA |
1st Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University() |
2nd Author's Name | Jun HAYAKAWA |
2nd Author's Affiliation | Advanced Research Laboratory, Hitachi, Ltd. |
3rd Author's Name | Huadong GAN |
3rd Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
4th Author's Name | Kotaro MIZUNUMA |
4th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
5th Author's Name | Ji Ho PARK |
5th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
6th Author's Name | Hiroyuki YAMAMOTO |
6th Author's Affiliation | Advanced Research Laboratory, Hitachi, Ltd.:Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
7th Author's Name | Katsuya MIURA |
7th Author's Affiliation | Advanced Research Laboratory, Hitachi, Ltd.:Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
8th Author's Name | Haruhiro HASEGAWA |
8th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
9th Author's Name | Ryutaro SASAKI |
9th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
10th Author's Name | Toshiyasu MEGURO |
10th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
11th Author's Name | Kenchi ITO |
11th Author's Affiliation | Advanced Research Laboratory, Hitachi, Ltd. |
12th Author's Name | Fumihiro MATSUKURA |
12th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
13th Author's Name | Hideo OHNO |
13th Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University |
Date | 2009-06-24 |
Paper # | ED2009-51,SDM2009-46 |
Volume (vol) | vol.109 |
Number (no) | 98 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |