Presentation 2009-06-24
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
Shoji IKEDA, Jun HAYAKAWA, Huadong GAN, Kotaro MIZUNUMA, Ji Ho PARK, Hiroyuki YAMAMOTO, Katsuya MIURA, Haruhiro HASEGAWA, Ryutaro SASAKI, Toshiyasu MEGURO, Kenchi ITO, Fumihiro MATSUKURA, Hideo OHNO,
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Abstract(in English) Magnetic tunnel junctions (MTJs) with highly oriented (001) MgO barrier/CoFeB ferromagnetic electrodes have attracted much interest because of the application to eco-friendly spin devices such as magnetoresisitive random access memories and nonvolatile logics with low-power consumption. We here describe giant tunnel magnetoresistance (TMR) ratio at room temperature (RT) and current-induced magnetization switching (CIMS) at relatively low critical current density J_C for the MgO barrier MTJs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Tunnel magnetoresistance / current-induced magnetization switching / MgO / CoFeB / synthetic ferrimagnetic free layer
Paper # ED2009-51,SDM2009-46
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Conference Information
Committee SDM
Conference Date 2009/6/17(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
Sub Title (in English)
Keyword(1) Tunnel magnetoresistance
Keyword(2) current-induced magnetization switching
Keyword(3) MgO
Keyword(4) CoFeB
Keyword(5) synthetic ferrimagnetic free layer
1st Author's Name Shoji IKEDA
1st Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University()
2nd Author's Name Jun HAYAKAWA
2nd Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd.
3rd Author's Name Huadong GAN
3rd Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
4th Author's Name Kotaro MIZUNUMA
4th Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
5th Author's Name Ji Ho PARK
5th Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
6th Author's Name Hiroyuki YAMAMOTO
6th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd.:Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
7th Author's Name Katsuya MIURA
7th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd.:Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
8th Author's Name Haruhiro HASEGAWA
8th Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
9th Author's Name Ryutaro SASAKI
9th Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
10th Author's Name Toshiyasu MEGURO
10th Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
11th Author's Name Kenchi ITO
11th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd.
12th Author's Name Fumihiro MATSUKURA
12th Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
13th Author's Name Hideo OHNO
13th Author's Affiliation Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
Date 2009-06-24
Paper # ED2009-51,SDM2009-46
Volume (vol) vol.109
Number (no) 98
Page pp.pp.-
#Pages 4
Date of Issue