Presentation 2009-07-23
Estimation of Electron Injection Barrier Height at Alq_3/Cathode Interface by Internal Photoemission Spectroscopy
Shinya Takaishi, Eiji Itoh,
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Abstract(in English) We have investigated electron injection barrier height at aluminum tris (8-hydroxy-quinoline) (Alq_3)/cathode interfaces by internal photoemission (IPE) measurement. A three layered device consisting of ITO/TiO_2/IL/Alq_3/cathode structure was used to fabricate the "electron-only device". The measured barrier heights were 0.86, 1.05, 1.3 and 1.55eV for MgAg, Al, Ag and Au electrodes. Barrier height showed linear relationship with work-function and electro-negativity of cathode materials. The slope parameter of 0.6 with electro-negativity was attributed to the interfacial charge transfer through the mid gap electronic states at the cathode/Alq_3 interface.
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Keyword(in English) internal photoemission / barrier height / Alq_3 / electron only device
Paper # OME2009-32
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Committee OME
Conference Date 2009/7/16(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Estimation of Electron Injection Barrier Height at Alq_3/Cathode Interface by Internal Photoemission Spectroscopy
Sub Title (in English)
Keyword(1) internal photoemission
Keyword(2) barrier height
Keyword(3) Alq_3
Keyword(4) electron only device
1st Author's Name Shinya Takaishi
1st Author's Affiliation Shinshu University, Faculty of Engineering()
2nd Author's Name Eiji Itoh
2nd Author's Affiliation Shinshu University, Faculty of Engineering
Date 2009-07-23
Paper # OME2009-32
Volume (vol) vol.109
Number (no) 147
Page pp.pp.-
#Pages 6
Date of Issue