Presentation 2009-08-11
Growth and characterization of telecom-wavelength quantum dots using Bi as a surfactant
Hiroshi OKAMOTO, Takehiko TAWARA, Hideki GOTOH, Hidehiko KAMADA, Tetsuomi SOGAWA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The effectiveness of adding TMBi during telecom-wavelength-quantum-dot growth on improving its optical quality and extending its emission wavelength is reported. It was confirmed that the Bi acted as a kind of surfactant during the growth. In addition, it was discussed that the origin of the emission-wavelength extension was resembled to "activated spinodal decomposition" reported for MBE grown QDs. Regarding the QD density, it was confirmed that the density was increased by using much higher V/III condition than usual during the growth. As for investigation for increasing the QD-stack number, a dislocation-free multiple QD stack in which each QD was not coupled to the other one located in neighbor layers was obtained by introducing GaAs_<0.72>P_<0.28> strain compensation layers. The special photoluminescence feature observed for this multiple QD-stack sample was discussed with the existence of non-radiative recombination centers. Further investigation of the recombination centers is needed for further improvement of the QD optical quality.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum dot / InAs / InGaAs / telecom wavelength / surfactant / Bi / photoluminescence / TEM / STEM
Paper # CPM2009-46
Date of Issue

Conference Information
Committee CPM
Conference Date 2009/8/3(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth and characterization of telecom-wavelength quantum dots using Bi as a surfactant
Sub Title (in English)
Keyword(1) quantum dot
Keyword(2) InAs
Keyword(3) InGaAs
Keyword(4) telecom wavelength
Keyword(5) surfactant
Keyword(6) Bi
Keyword(7) photoluminescence
Keyword(8) TEM
Keyword(9) STEM
1st Author's Name Hiroshi OKAMOTO
1st Author's Affiliation Graduate School of Science and Technology, Hirosaki University()
2nd Author's Name Takehiko TAWARA
2nd Author's Affiliation NTT Basic Research Laboratories
3rd Author's Name Hideki GOTOH
3rd Author's Affiliation NTT Basic Research Laboratories
4th Author's Name Hidehiko KAMADA
4th Author's Affiliation NTT Basic Research Laboratories
5th Author's Name Tetsuomi SOGAWA
5th Author's Affiliation NTT Basic Research Laboratories
Date 2009-08-11
Paper # CPM2009-46
Volume (vol) vol.109
Number (no) 171
Page pp.pp.-
#Pages 6
Date of Issue