| Presentation | 2009-07-02 Measured Data Evaluations for Both Behaviors of MOSFET and Lateral BJT Based on High Breakdown Voltage SOI-CMOS Process using Asymmetric LDD Structure Takashi HAMAHATA, Toshiaki KOIKE-AKINO, Toshiro AKINO, T. Goji ETOH, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes that, being based on 0.6μm SOI-CMOS process of X-FAB having an MOSFET structure with a high breakdown voltage using a long asymmetric LDD structure and thick gate oxide at the drain side, we design two kinds of the MOSFET channel lengths (i.e. the base widths of the parasitic lateral BJT which is inherent to the MOSFETs) and evaluate both current characteristics for the MOSFETs and the lateral BJTs. We measure the drain (collector)-source (emitter) currents for the fabricated MOSFETs as the following three cases: (1) the behavior of making the MOSFETs "on" while letting the lateral BJTs "inactive," (2) the behavior of making the lateral BJTs "active" while letting the MOSFETs "off," and (3) the most significant joint behavior of making the MOSFET "on" and the lateral BJT "active." Moreover, we analyze the above measured current data of the joint behavior compared to those of other two behaviors. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / BJT / LDD / SOI |
| Paper # | CAS2009-19,VLD2009-24,SIP2009-36 |
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| Committee | SIP |
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| Conference Date | 2009/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Signal Processing (SIP) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Measured Data Evaluations for Both Behaviors of MOSFET and Lateral BJT Based on High Breakdown Voltage SOI-CMOS Process using Asymmetric LDD Structure |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | BJT |
| Keyword(3) | LDD |
| Keyword(4) | SOI |
| 1st Author's Name | Takashi HAMAHATA |
| 1st Author's Affiliation | School of Biology-Oriented Science and Technology, Kinki University() |
| 2nd Author's Name | Toshiaki KOIKE-AKINO |
| 2nd Author's Affiliation | School of Engineering and Applied Sciences, Harvard University |
| 3rd Author's Name | Toshiro AKINO |
| 3rd Author's Affiliation | School of Biology-Oriented Science and Technology, Kinki University |
| 4th Author's Name | T. Goji ETOH |
| 4th Author's Affiliation | School of Science and Engineering, Kinki University |
| Date | 2009-07-02 |
| Paper # | CAS2009-19,VLD2009-24,SIP2009-36 |
| Volume (vol) | vol.109 |
| Number (no) | 112 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |