| Presentation | 2009-06-19 1.3μm AlGaInAs/InP DFB Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer Hideki YAGI, Yutaka ONISHI, Yukihiro TSUJI, Hiroyuki ICHIKAWA, Hiroyuki YOSHINAGA, Toshio NOMAGUCHI, Kenji HIRATSUKA, Katsumi UESAKA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 1.3μm AlGaInAs/InP distributed feedback (DFB) lasers with the ridge-waveguide structure buried by the benzocyclobutene (BCB) polymer were fabricated. The laser showed the wide electrical bandwidth of more than 20GHz owing to the low parasitic capacitance. A clear eye-opening was observed with the extinction ratio of 6dB in 26Gbit/s direct modulation at measurement temperature of 25℃. Furthermore, uncooled 14Gbit/s direct modulation with the extinction ratio of 5dB was also achieved up to the measurement temperature of 85℃. These results indicate that this device is very promising for the realization of transmitters with high-speed direct modulation of more than 10Gbitis. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BCB planarization process / AlGaInAs/InP / Ridge-waveguide structure / DFB laser |
| Paper # | OPE2009-27,LQE2009-30 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/6/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1.3μm AlGaInAs/InP DFB Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer |
| Sub Title (in English) | |
| Keyword(1) | BCB planarization process |
| Keyword(2) | AlGaInAs/InP |
| Keyword(3) | Ridge-waveguide structure |
| Keyword(4) | DFB laser |
| 1st Author's Name | Hideki YAGI |
| 1st Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD.() |
| 2nd Author's Name | Yutaka ONISHI |
| 2nd Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD. |
| 3rd Author's Name | Yukihiro TSUJI |
| 3rd Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD. |
| 4th Author's Name | Hiroyuki ICHIKAWA |
| 4th Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD. |
| 5th Author's Name | Hiroyuki YOSHINAGA |
| 5th Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD. |
| 6th Author's Name | Toshio NOMAGUCHI |
| 6th Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD. |
| 7th Author's Name | Kenji HIRATSUKA |
| 7th Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD. |
| 8th Author's Name | Katsumi UESAKA |
| 8th Author's Affiliation | Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD. |
| Date | 2009-06-19 |
| Paper # | OPE2009-27,LQE2009-30 |
| Volume (vol) | vol.109 |
| Number (no) | 93 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |