Presentation 2009-03-06
Derivation of Equation for Electrical Conduction in Organic Semiconductor using Device Simulation
Reiji Hattori, Sang-Gun Lee,
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Abstract(in English) The theoretical equations for I-V characteristics in an organic semiconductor was derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The validity of this equation was confirmed by comparing with the results from the device simulation where the same models and parameters were employed. When the barrier height is high enough, the electric field get to be constant because of no space-charge effect, but the field distribution has to be considered in case of low barrier height. There is, however, no zero-field region even in case of extremely low barrier height, which suggests the difference from the ordinal space-charge limited current.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Organic Semiconductor / Organic light-emitting diode / Electronic conduction / Device simulation / Space-charge limited current
Paper # EID2008-89,OME2008-100
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Committee EID
Conference Date 2009/2/27(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Derivation of Equation for Electrical Conduction in Organic Semiconductor using Device Simulation
Sub Title (in English)
Keyword(1) Organic Semiconductor
Keyword(2) Organic light-emitting diode
Keyword(3) Electronic conduction
Keyword(4) Device simulation
Keyword(5) Space-charge limited current
1st Author's Name Reiji Hattori
1st Author's Affiliation Faculty of Information Science and Electrical Engineering, Kyushu University()
2nd Author's Name Sang-Gun Lee
2nd Author's Affiliation Faculty of Information Science and Electrical Engineering, Kyushu University
Date 2009-03-06
Paper # EID2008-89,OME2008-100
Volume (vol) vol.108
Number (no) 468
Page pp.pp.-
#Pages 4
Date of Issue