Presentation	2009-03-06 Effect of hole extraction layer on the photovoltaic properties of H_2TPP/C_<60> organic solar cells and surface potential measurement Yuji Higuchi, Daisuke Furuhata, Eiji Itoh, Keiichi Miyairi,
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Abstract(in English)	We have fabricated the photovoltaic devices consisting of ITO/hole extraction layer/H_2TPP/C_<60>/BCP/Al structures. Open circuit voltage (V_) markedly increased when H_2TPP was used as p-type semiconductor instead of copper pthalocyanine. Both fill factor and VOC further increased with the insertion of NiO or MoO_3 layer due to the increment of built-in potential. However, photovoltaic properties of the device with MoO_3 was markedly degraded by heat-treatment. It was ascribed to the change of work-function of MoO_3 and the electric field at H_2TPP/MoO_3 interface by surface potential measurement.
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Keyword(in English)	Organic solar cells / photovoltage / porphyrin / fullerene / surface potential
Paper #	EID2008-86,OME2008-97
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Committee	EID
Conference Date	2009/2/27(1days)
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Registration To	Electronic Information Displays (EID)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	Effect of hole extraction layer on the photovoltaic properties of H_2TPP/C_<60> organic solar cells and surface potential measurement
Sub Title (in English)
Keyword(1)	Organic solar cells
Keyword(2)	photovoltage
Keyword(3)	porphyrin
Keyword(4)	fullerene
Keyword(5)	surface potential
1st Author's Name	Yuji Higuchi
1st Author's Affiliation	Faculty of Engineering, Shinshu University()
2nd Author's Name	Daisuke Furuhata
2nd Author's Affiliation	Faculty of Engineering, Shinshu University
3rd Author's Name	Eiji Itoh
3rd Author's Affiliation	Faculty of Engineering, Shinshu University
4th Author's Name	Keiichi Miyairi
4th Author's Affiliation	Faculty of Engineering, Shinshu University
Date	2009-03-06
Paper #	EID2008-86,OME2008-97
Volume (vol)	vol.108
Number (no)	468
Page	pp.pp.-
#Pages	6
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