Presentation 2009-03-06
Multiple phase transition observed in carrier mobilities of (BEDT-TTF) (TCNQ) crystalline field effect transistor
Masatoshi SAKAI, Yuya ITO, Tomoki TAKAHARA, Masakazu NAKAMURA, Kazuhiro KUDO,
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Abstract(in English) Temperature dependence of electron and hole mobility were investigated for (BEDT-TTF) (TCNQ) crystalline field effect transistors. The field-effect electron and hole mobility abruptly increased at 280K, which will due to a phase transition occuring at the channel region of the field-effect transistor. In addition, ferroelectricity-like behavior was observed below 280K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Field effect transistor / Charge transfer complex / Mott insulator / Metal-insulator transition
Paper # EID2008-87,OME2008-98
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Committee OME
Conference Date 2009/2/27(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Multiple phase transition observed in carrier mobilities of (BEDT-TTF) (TCNQ) crystalline field effect transistor
Sub Title (in English)
Keyword(1) Field effect transistor
Keyword(2) Charge transfer complex
Keyword(3) Mott insulator
Keyword(4) Metal-insulator transition
1st Author's Name Masatoshi SAKAI
1st Author's Affiliation Department of Electrical and Electronic Engineering, Chiba University()
2nd Author's Name Yuya ITO
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Chiba University
3rd Author's Name Tomoki TAKAHARA
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Chiba University
4th Author's Name Masakazu NAKAMURA
4th Author's Affiliation Department of Electrical and Electronic Engineering, Chiba University
5th Author's Name Kazuhiro KUDO
5th Author's Affiliation Department of Electrical and Electronic Engineering, Chiba University
Date 2009-03-06
Paper # EID2008-87,OME2008-98
Volume (vol) vol.108
Number (no) 469
Page pp.pp.-
#Pages 4
Date of Issue