Presentation 2009-03-13
Solid State Power Amplifier with GaN FET for Ku-band
Ryo Mochizuki, Tatsuya Fukushima, Hiroaki Iwabuchi, Yoshio Yamada, Takao Kato,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, we present a solid state power amplifier (SSPA) for Ku-band applications. This is the first report of SSPA using with gallium nitride (GaN) field effect transistors (FETs), which output power exceeds 50W as world commercial record for Ku-band. We apply a linearization technique to GaN FETs' power amplifiers for the purpose of improving a linearity of RF module. The intermodulation distortion is under -25dBc with 50dBm output power at -10C to +45C. The SSPA controls RF gain stability with a temperature compensator for FETs which connected with 12 steps straightly.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SNG / SSPA / Gallium Nitride / GaN HEMT / Ku-band / Intermodulation Distortion / Temperature compensator
Paper # EMCJ2008-121
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Conference Information
Committee EMCJ
Conference Date 2009/3/6(1days)
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Paper Information
Registration To Electromagnetic Compatibility (EMCJ)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Solid State Power Amplifier with GaN FET for Ku-band
Sub Title (in English)
Keyword(1) SNG
Keyword(2) SSPA
Keyword(3) Gallium Nitride
Keyword(4) GaN HEMT
Keyword(5) Ku-band
Keyword(6) Intermodulation Distortion
Keyword(7) Temperature compensator
1st Author's Name Ryo Mochizuki
1st Author's Affiliation Toshiba Corporation()
2nd Author's Name Tatsuya Fukushima
2nd Author's Affiliation Toshiba Corporation
3rd Author's Name Hiroaki Iwabuchi
3rd Author's Affiliation Toshiba Corporation
4th Author's Name Yoshio Yamada
4th Author's Affiliation Toshiba Corporation
5th Author's Name Takao Kato
5th Author's Affiliation Toshiba Corporation
Date 2009-03-13
Paper # EMCJ2008-121
Volume (vol) vol.108
Number (no) 482
Page pp.pp.-
#Pages 6
Date of Issue