| Presentation | 2009-05-15 MBE-VLS growth of compound semiconductor nanowires on Si sunstrate Masahito YAMAGUCHI, Ji-Hyun PAEK, Hirohide ICHIHASHI, Isao HORIUCHI, Nobuhiko SAWAKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Compound semiconductor nanowires (NWs) attract attention for the application to opro-electronic integrated circuit (OEIC) or Micro Electro Mechanical Systems (MEMS) in the next generation. Therefore, we attempted to fabricate compound semiconductor NWs on Si substrate by combination method of molecular beam epitaxy (MBE) and Vapor-Liquid-Solid (VLS). Especially, we succeeded in fabricating the catalyst-free GaAs NWs on (111) Si substrate. This growth mechanism is explained by the fact that the GaAs NWs are grown by VLS mode through Ga droplets, which are formed at the first growth step. Adopting these facts, we attempted to make GaAs/AlGaAs core-shell structure on Si substrate. In anticipation of device application, we have also fabricated the GaAs NW bridge in a trench of a patterned (110) Si substrate and InAs NWs on (111) Si substrate because of planar device and decrease of depletion layer, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MBE-VLS / Nanowire / Catalyst-free / Compound semiconductor / Si substrate |
| Paper # | ED2009-27,CPM2009-17,SDM2009-17 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/5/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MBE-VLS growth of compound semiconductor nanowires on Si sunstrate |
| Sub Title (in English) | |
| Keyword(1) | MBE-VLS |
| Keyword(2) | Nanowire |
| Keyword(3) | Catalyst-free |
| Keyword(4) | Compound semiconductor |
| Keyword(5) | Si substrate |
| 1st Author's Name | Masahito YAMAGUCHI |
| 1st Author's Affiliation | Department of Electrical Engineering and Computer Science, Nagoya University() |
| 2nd Author's Name | Ji-Hyun PAEK |
| 2nd Author's Affiliation | Department of Electrical Engineering and Computer Science, Nagoya University |
| 3rd Author's Name | Hirohide ICHIHASHI |
| 3rd Author's Affiliation | Department of Electrical Engineering and Computer Science, Nagoya University |
| 4th Author's Name | Isao HORIUCHI |
| 4th Author's Affiliation | Department of Electrical Engineering and Computer Science, Nagoya University |
| 5th Author's Name | Nobuhiko SAWAKI |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Aichi Institute of Technology |
| Date | 2009-05-15 |
| Paper # | ED2009-27,CPM2009-17,SDM2009-17 |
| Volume (vol) | vol.109 |
| Number (no) | 23 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |