Presentation 2009-05-14
Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO_2 Substrates
Akihiko HIROE, Tetsuya GOTO, Akinobu TERAMOTO, Tadahiro OHMI,
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Abstract(in English) Microcrystalline Si_<1-x>Ge_x (x~0.8) has been successfully deposited over SiO_2 substrates by magnetron sputtering. Detailed investigation about the deposition condition revealed that crystalline phase begins to form at about 300℃, which roughly correspond to half the melting temperature of the material where surface migration of deposited atom starts to take place. Substrate bias effect was also investigated, which showed the degradation of crystallinity for the substrate temperature of 350℃ while improvement of crystallinity was found for 300℃ samples.
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Keyword(in English) magnetron sputter / microcrystalline SiGe / thin film transistor
Paper # ED2009-25,CPM2009-15,SDM2009-15
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Committee ED
Conference Date 2009/5/7(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO_2 Substrates
Sub Title (in English)
Keyword(1) magnetron sputter
Keyword(2) microcrystalline SiGe
Keyword(3) thin film transistor
1st Author's Name Akihiko HIROE
1st Author's Affiliation Ohmi Lab. New Industry Creation Hatchery Center (NICHe) Tohoku University()
2nd Author's Name Tetsuya GOTO
2nd Author's Affiliation Ohmi Lab. New Industry Creation Hatchery Center (NICHe) Tohoku University
3rd Author's Name Akinobu TERAMOTO
3rd Author's Affiliation Ohmi Lab. New Industry Creation Hatchery Center (NICHe) Tohoku University
4th Author's Name Tadahiro OHMI
4th Author's Affiliation Ohmi Lab. New Industry Creation Hatchery Center (NICHe) Tohoku University
Date 2009-05-14
Paper # ED2009-25,CPM2009-15,SDM2009-15
Volume (vol) vol.109
Number (no) 23
Page pp.pp.-
#Pages 6
Date of Issue