講演名 | 2009-05-14 A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications , |
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抄録(和) | |
抄録(英) | Gallium-Indium-sulfide-oxide thin films were deposited onto F-doped SnO_2-coated glass by electrochemical deposition from an aqueous bath. The films were deposited at three different ratios of gallium to indium in the precursor bath; namely [Ga/In]=2/8, 5/5 and 8/2. The impact of the gallium content on the composition, optical transmission, structure, photosensitivity and morphology of the deposited films was investigated. The films deposited at [Ga/In]=5/5 and 8/2 had energy gap as high as 3.5eV. The X-ray diffraction spectrum of the film deposited at [Ga/In]=2/8 contained weak peaks of indium metal, but the In peaks were absent in the spectra of the films deposited at [Ga/In]=5/5 and 8/2. The photosensitivity of the film was observed by means of photoelectrochemical measurements, which confirmed that all the films showed n-type conduction. |
キーワード(和) | |
キーワード(英) | Gallium indium sulfide / thin films / electrochemical deposition / Cd-free buffer layer |
資料番号 | ED2009-23,CPM2009-13,SDM2009-13 |
発行日 |
研究会情報 | |
研究会 | ED |
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開催期間 | 2009/5/7(から1日開催) |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications |
サブタイトル(和) | |
キーワード(1)(和/英) | / Gallium indium sulfide |
第 1 著者 氏名(和/英) | / M. Abdel Haleem |
第 1 著者 所属(和/英) | Nagoya Institute of Technology |
発表年月日 | 2009-05-14 |
資料番号 | ED2009-23,CPM2009-13,SDM2009-13 |
巻番号(vol) | vol.109 |
号番号(no) | 23 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |