Presentation 2009-04-24
Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance
Shintaro KANOH, Sho NAGATA, Gou NAKAGAWA, Tanemasa ASANO,
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Abstract(in English) In the case of solid phase crystallization of amorphous Si (a-Si) deposited by plasma-enhanced chemical vapor deposition (PECVD), it is difficult to clearly observe the spontaneous nucleation and growth in contrast to the case of a-Si films deposited by evaporation in ultra-high vacuum. The polycrystalline films thus crystallized from PECVD deposited a-Si films show small carrier mobility when they are applied to TFTs. In this paper, metal induced lateral crystallization (MILC) has been applied to a-Si films prepared by PECVD. It has better carrier mobility and a similar growth characteristic to the film crystallized from a-Si deposited in ultra-high vacuum. Results of an attempt of grain filtering carried out by patterning a-Si films prior to MILC are also described.
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Keyword(in English) polycrystalline silicon / thin film transistor / plasma-enhanced chemical vapor deposition / metal induced lateral crystallization / MILC
Paper # SDM2009-7,OME2009-7
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Conference Information
Committee OME
Conference Date 2009/4/17(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance
Sub Title (in English)
Keyword(1) polycrystalline silicon
Keyword(2) thin film transistor
Keyword(3) plasma-enhanced chemical vapor deposition
Keyword(4) metal induced lateral crystallization
Keyword(5) MILC
1st Author's Name Shintaro KANOH
1st Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University()
2nd Author's Name Sho NAGATA
2nd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
3rd Author's Name Gou NAKAGAWA
3rd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
4th Author's Name Tanemasa ASANO
4th Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
Date 2009-04-24
Paper # SDM2009-7,OME2009-7
Volume (vol) vol.109
Number (no) 20
Page pp.pp.-
#Pages 6
Date of Issue