Presentation 2009-04-24
Crystallization and annealing of heavily doped p-type Si film and electronic properties
Takashi Noguchi, Tomoyuki Miyahira, Toshiharu Suzuki,
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Abstract(in English) As a result of excimer laser annealing (ELA) for heavily boron doped Si film, the sheet resistance decreased with improving the crystallinity. Si film of 50nm thickness with extremely low sheet resistance below 50ohm/□ was obtained. Effective electrical activation in the Si film is comparable to the reported result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation is effective to electrodes in CMOS TFTs with pin sensor-diodes and for thin-film solar cell as a new System on Panel (SoP).
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Keyword(in English) Poly-Si / TFT / sheet resistance / conductivity / activation / ion doping / ELA / TFT / photo-diode sensor / solar cell
Paper # SDM2009-6,OME2009-6
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Committee OME
Conference Date 2009/4/17(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Crystallization and annealing of heavily doped p-type Si film and electronic properties
Sub Title (in English)
Keyword(1) Poly-Si
Keyword(2) TFT
Keyword(3) sheet resistance
Keyword(4) conductivity
Keyword(5) activation
Keyword(6) ion doping
Keyword(7) ELA
Keyword(8) TFT
Keyword(9) photo-diode sensor
Keyword(10) solar cell
1st Author's Name Takashi Noguchi
1st Author's Affiliation Faculty of Engineering, University of the Ryukyus()
2nd Author's Name Tomoyuki Miyahira
2nd Author's Affiliation Faculty of Engineering, University of the Ryukyus
3rd Author's Name Toshiharu Suzuki
3rd Author's Affiliation SEN (an SHI and Axcelis Company)
Date 2009-04-24
Paper # SDM2009-6,OME2009-6
Volume (vol) vol.109
Number (no) 20
Page pp.pp.-
#Pages 4
Date of Issue