Presentation | 2009-04-24 Crystallization and annealing of heavily doped p-type Si film and electronic properties Takashi Noguchi, Tomoyuki Miyahira, Toshiharu Suzuki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | As a result of excimer laser annealing (ELA) for heavily boron doped Si film, the sheet resistance decreased with improving the crystallinity. Si film of 50nm thickness with extremely low sheet resistance below 50ohm/□ was obtained. Effective electrical activation in the Si film is comparable to the reported result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation is effective to electrodes in CMOS TFTs with pin sensor-diodes and for thin-film solar cell as a new System on Panel (SoP). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Poly-Si / TFT / sheet resistance / conductivity / activation / ion doping / ELA / TFT / photo-diode sensor / solar cell |
Paper # | SDM2009-6,OME2009-6 |
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Conference Information | |
Committee | OME |
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Conference Date | 2009/4/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Crystallization and annealing of heavily doped p-type Si film and electronic properties |
Sub Title (in English) | |
Keyword(1) | Poly-Si |
Keyword(2) | TFT |
Keyword(3) | sheet resistance |
Keyword(4) | conductivity |
Keyword(5) | activation |
Keyword(6) | ion doping |
Keyword(7) | ELA |
Keyword(8) | TFT |
Keyword(9) | photo-diode sensor |
Keyword(10) | solar cell |
1st Author's Name | Takashi Noguchi |
1st Author's Affiliation | Faculty of Engineering, University of the Ryukyus() |
2nd Author's Name | Tomoyuki Miyahira |
2nd Author's Affiliation | Faculty of Engineering, University of the Ryukyus |
3rd Author's Name | Toshiharu Suzuki |
3rd Author's Affiliation | SEN (an SHI and Axcelis Company) |
Date | 2009-04-24 |
Paper # | SDM2009-6,OME2009-6 |
Volume (vol) | vol.109 |
Number (no) | 20 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |