| Presentation | 2009-04-24 Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi KUROSAWA, Naoyuki KAWABATA, Taizoh SADOH, Masanobu MIYAO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low-temperature (<550℃) Al-induced crystallization (AIC) of amorphous Si_<1-x>Ge_x (x=0-1) on glass substrate has been investigated to achieve high-speed thin-film transistors and high-efficiency thin-film solar cells. Crystal growth morphology drastically changed with Ge fraction, and layer exchange occurred heterogeneously for high Ge fractions (>50%). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, homogeneous layer exchange was achieved for samples with the whole Ge fractions (x=0-1) by controlling the air exposure time. These new findings will be a powerful tool to obtain high quality poly-SiGe films on glass substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Al-induced crystallization (AIC) / silicon germanium (SiGe) / thin-film transistor / thin-film solar cell / low-temperature crystallization |
| Paper # | SDM2009-5,OME2009-5 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2009/4/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange |
| Sub Title (in English) | |
| Keyword(1) | Al-induced crystallization (AIC) |
| Keyword(2) | silicon germanium (SiGe) |
| Keyword(3) | thin-film transistor |
| Keyword(4) | thin-film solar cell |
| Keyword(5) | low-temperature crystallization |
| 1st Author's Name | Masashi KUROSAWA |
| 1st Author's Affiliation | Department of Electronics, Kyushu University() |
| 2nd Author's Name | Naoyuki KAWABATA |
| 2nd Author's Affiliation | Department of Electronics, Kyushu University |
| 3rd Author's Name | Taizoh SADOH |
| 3rd Author's Affiliation | Department of Electronics, Kyushu University |
| 4th Author's Name | Masanobu MIYAO |
| 4th Author's Affiliation | Department of Electronics, Kyushu University |
| Date | 2009-04-24 |
| Paper # | SDM2009-5,OME2009-5 |
| Volume (vol) | vol.109 |
| Number (no) | 20 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |