Presentation 2009-04-24
Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor
Yoshinori HORII, Mitsuhiro IKAWA, Koichi SAKAGUCHI, Masayuki CHIKAMATSU, Yuji YOSHIDA, Reiko AZUMI, Hiroshi MOGI, Masahiko KITAGWA, Hisatoshi KONISHI, Kiyoshi YASE,
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Abstract(in English) We have investigated self-assembled monolayer (SAM) treatment on SiO_2 gate insulator of poly (3-hexylthiophene) (P3HT) thin-film transistor (TFT), and demonstrated a correlation between mobility and surface energy of the insulator. The device with lower surface free energy shows higher mobility. The docosyltrichlorosilane (DCTS)-treated device exhibits the best performance among the various SAM-treated device examined. Field-effect mobility and on/off ratio of the DCTS-treated P3HT TFT were 0.015cm^2/Vs and >10^5, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Organic thin-film transistor / poly (3-hexylthiophene) / self-assembled monolayer / docosyltrichlorosilane
Paper # SDM2009-3,OME2009-3
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Committee OME
Conference Date 2009/4/17(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor
Sub Title (in English)
Keyword(1) Organic thin-film transistor
Keyword(2) poly (3-hexylthiophene)
Keyword(3) self-assembled monolayer
Keyword(4) docosyltrichlorosilane
1st Author's Name Yoshinori HORII
1st Author's Affiliation Photonics Research Institute, National Institute of Advaced Industrial Science and Technology:Graduate School of Engineering, Tottori University()
2nd Author's Name Mitsuhiro IKAWA
2nd Author's Affiliation Photonics Research Institute, National Institute of Advaced Industrial Science and Technology
3rd Author's Name Koichi SAKAGUCHI
3rd Author's Affiliation Photonics Research Institute, National Institute of Advaced Industrial Science and Technology
4th Author's Name Masayuki CHIKAMATSU
4th Author's Affiliation Photonics Research Institute, National Institute of Advaced Industrial Science and Technology
5th Author's Name Yuji YOSHIDA
5th Author's Affiliation Photonics Research Institute, National Institute of Advaced Industrial Science and Technology
6th Author's Name Reiko AZUMI
6th Author's Affiliation Photonics Research Institute, National Institute of Advaced Industrial Science and Technology
7th Author's Name Hiroshi MOGI
7th Author's Affiliation Japan Chemical Innovation Institute:Shin-Etsu Chemical
8th Author's Name Masahiko KITAGWA
8th Author's Affiliation Graduate School of Engineering, Tottori University
9th Author's Name Hisatoshi KONISHI
9th Author's Affiliation Graduate School of Engineering, Tottori University
10th Author's Name Kiyoshi YASE
10th Author's Affiliation Photonics Research Institute, National Institute of Advaced Industrial Science and Technology
Date 2009-04-24
Paper # SDM2009-3,OME2009-3
Volume (vol) vol.109
Number (no) 20
Page pp.pp.-
#Pages 6
Date of Issue