Presentation | 2009-04-24 Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor Yoshinori HORII, Mitsuhiro IKAWA, Koichi SAKAGUCHI, Masayuki CHIKAMATSU, Yuji YOSHIDA, Reiko AZUMI, Hiroshi MOGI, Masahiko KITAGWA, Hisatoshi KONISHI, Kiyoshi YASE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have investigated self-assembled monolayer (SAM) treatment on SiO_2 gate insulator of poly (3-hexylthiophene) (P3HT) thin-film transistor (TFT), and demonstrated a correlation between mobility and surface energy of the insulator. The device with lower surface free energy shows higher mobility. The docosyltrichlorosilane (DCTS)-treated device exhibits the best performance among the various SAM-treated device examined. Field-effect mobility and on/off ratio of the DCTS-treated P3HT TFT were 0.015cm^2/Vs and >10^5, respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Organic thin-film transistor / poly (3-hexylthiophene) / self-assembled monolayer / docosyltrichlorosilane |
Paper # | SDM2009-3,OME2009-3 |
Date of Issue |
Conference Information | |
Committee | OME |
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Conference Date | 2009/4/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor |
Sub Title (in English) | |
Keyword(1) | Organic thin-film transistor |
Keyword(2) | poly (3-hexylthiophene) |
Keyword(3) | self-assembled monolayer |
Keyword(4) | docosyltrichlorosilane |
1st Author's Name | Yoshinori HORII |
1st Author's Affiliation | Photonics Research Institute, National Institute of Advaced Industrial Science and Technology:Graduate School of Engineering, Tottori University() |
2nd Author's Name | Mitsuhiro IKAWA |
2nd Author's Affiliation | Photonics Research Institute, National Institute of Advaced Industrial Science and Technology |
3rd Author's Name | Koichi SAKAGUCHI |
3rd Author's Affiliation | Photonics Research Institute, National Institute of Advaced Industrial Science and Technology |
4th Author's Name | Masayuki CHIKAMATSU |
4th Author's Affiliation | Photonics Research Institute, National Institute of Advaced Industrial Science and Technology |
5th Author's Name | Yuji YOSHIDA |
5th Author's Affiliation | Photonics Research Institute, National Institute of Advaced Industrial Science and Technology |
6th Author's Name | Reiko AZUMI |
6th Author's Affiliation | Photonics Research Institute, National Institute of Advaced Industrial Science and Technology |
7th Author's Name | Hiroshi MOGI |
7th Author's Affiliation | Japan Chemical Innovation Institute:Shin-Etsu Chemical |
8th Author's Name | Masahiko KITAGWA |
8th Author's Affiliation | Graduate School of Engineering, Tottori University |
9th Author's Name | Hisatoshi KONISHI |
9th Author's Affiliation | Graduate School of Engineering, Tottori University |
10th Author's Name | Kiyoshi YASE |
10th Author's Affiliation | Photonics Research Institute, National Institute of Advaced Industrial Science and Technology |
Date | 2009-04-24 |
Paper # | SDM2009-3,OME2009-3 |
Volume (vol) | vol.109 |
Number (no) | 20 |
Page | pp.pp.- |
#Pages | 6 |
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