Presentation 2009-04-24
Solution preparation effect on n-type field-effect-transistor characteristics using PCBM
Kousuke HAMACHI, Takeomi MORITA, Shuichi NAGAMATSU, Wataru TAKASHIMA, Shuichiro KUWASHIMA, Keiichi Kaneto,
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Abstract(in English) We investigated the preparation dependence on the electronic characteristics of n-type organic field-effect transistors (OFETs) consisted of [6.6]-Phenyl C_<61>-Butyric acid Methyl ester (PCBM) as active layer. Although field-effect mobility, threshold voltage and on-current were almost stationary, the off-current was strongly changed with the agitation time of the solution. A cluster distribution model has been proposed to explain the results.
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Keyword(in English) OFET / n-type / fullerene / PCBM / cluster / solution
Paper # SDM2009-1,OME2009-1
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Committee OME
Conference Date 2009/4/17(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Solution preparation effect on n-type field-effect-transistor characteristics using PCBM
Sub Title (in English)
Keyword(1) OFET
Keyword(2) n-type
Keyword(3) fullerene
Keyword(4) PCBM
Keyword(5) cluster
Keyword(6) solution
1st Author's Name Kousuke HAMACHI
1st Author's Affiliation LSSE Kyushu Inst. Tech.()
2nd Author's Name Takeomi MORITA
2nd Author's Affiliation LSSE Kyushu Inst. Tech.
3rd Author's Name Shuichi NAGAMATSU
3rd Author's Affiliation CSE Kyushu Inst. Tech.
4th Author's Name Wataru TAKASHIMA
4th Author's Affiliation Res. Center Adv. Eco-fitting Tech. Kyushu Inst. Tech.
5th Author's Name Shuichiro KUWASHIMA
5th Author's Affiliation Department of Microengineering Kyoto University
6th Author's Name Keiichi Kaneto
6th Author's Affiliation LSSE Kyushu Inst. Tech.
Date 2009-04-24
Paper # SDM2009-1,OME2009-1
Volume (vol) vol.109
Number (no) 20
Page pp.pp.-
#Pages 4
Date of Issue