| Presentation | 2009-04-24 Real-time monitoring of the growth of 3C-SiC films on Si substrate with pyrometric interferometry Eiji SAITO, Maki SUEMITSU, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Temperature oscillation |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3C-SiC / Si / monomethyl-silane / Pyrometric interferometry |
| Paper # | ED2009-14 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/4/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Real-time monitoring of the growth of 3C-SiC films on Si substrate with pyrometric interferometry |
| Sub Title (in English) | |
| Keyword(1) | 3C-SiC |
| Keyword(2) | Si |
| Keyword(3) | monomethyl-silane |
| Keyword(4) | Pyrometric interferometry |
| 1st Author's Name | Eiji SAITO |
| 1st Author's Affiliation | Research Institute of Electrical Communication Tohoku University() |
| 2nd Author's Name | Maki SUEMITSU |
| 2nd Author's Affiliation | Research Institute of Electrical Communication Tohoku University |
| Date | 2009-04-24 |
| Paper # | ED2009-14 |
| Volume (vol) | vol.109 |
| Number (no) | 16 |
| Page | pp.pp.- |
| #Pages | 3 |
| Date of Issue | |