| Presentation | 2009-04-24 Graphene-on-silicon (GOS) technology for formation of high-mobility ultrathin channel layer on Si substrate Hiroyuki HANDA, Yu MIYAMOTO, Eiji SAITO, Hirokazu FUKIDOME, Takashi ITO, Maki SUEMITSU, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | With its industrial adaptability, epitaxial graphene, a graphene film formed by UHV annealing of SiC bulk substrates, is attracting recent attention. Still, a growth technique that allows formation of graphene films on Si substrates is strongly demanded when we want to utilize graphene as a post-CMOS material. To this goal, we have developed a growth technique of graphene on Si substrates by using an epitaxial film of 3C-SiC formed by organosilane gas-source MBE and its subsequent surface modification. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Graphene / Si / 3C-SiC / Organosilane / Gas-source MBE |
| Paper # | ED2009-10 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/4/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Graphene-on-silicon (GOS) technology for formation of high-mobility ultrathin channel layer on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | Si |
| Keyword(3) | 3C-SiC |
| Keyword(4) | Organosilane |
| Keyword(5) | Gas-source MBE |
| 1st Author's Name | Hiroyuki HANDA |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Yu MIYAMOTO |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Eiji SAITO |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | Hirokazu FUKIDOME |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 5th Author's Name | Takashi ITO |
| 5th Author's Affiliation | Center for Interdisciplinary Research, Tohoku University |
| 6th Author's Name | Maki SUEMITSU |
| 6th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University:CREST, Japan Science and Technology Agency |
| Date | 2009-04-24 |
| Paper # | ED2009-10 |
| Volume (vol) | vol.109 |
| Number (no) | 16 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |