Presentation | 2009-04-24 Generation mechanisms of sub-grain boundaries in Si bulk multicrystals during crystal growth Noritaka USAMI, Kentaro KUTSUKAKE, Kozo FUJIWARA, Kazuo NAKAJIMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to improve the conversion efficiency of solar cells based on Si multicrystals, it is of great importance to develop novel crystal growth technology to permit manipulation of microstructures in Si multicrystals based on knowledge obtained through fundamental research on crystal growth, generation mechanisms of crystal defects, impact of microstructures and defects on electrical and optical properties. In this paper, we explain generation mechanisms of sub-grain boundaries in Si multicrystals during directional solidification. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Si multicrystals / sub-grain boundary / microstructure control / solar cell |
Paper # | ED2009-8 |
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Committee | ED |
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Conference Date | 2009/4/16(1days) |
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Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Generation mechanisms of sub-grain boundaries in Si bulk multicrystals during crystal growth |
Sub Title (in English) | |
Keyword(1) | Si multicrystals |
Keyword(2) | sub-grain boundary |
Keyword(3) | microstructure control |
Keyword(4) | solar cell |
1st Author's Name | Noritaka USAMI |
1st Author's Affiliation | Institute for Materials Research (IMR), Tohoku University() |
2nd Author's Name | Kentaro KUTSUKAKE |
2nd Author's Affiliation | Institute for Materials Research (IMR), Tohoku University |
3rd Author's Name | Kozo FUJIWARA |
3rd Author's Affiliation | Institute for Materials Research (IMR), Tohoku University |
4th Author's Name | Kazuo NAKAJIMA |
4th Author's Affiliation | Institute for Materials Research (IMR), Tohoku University |
Date | 2009-04-24 |
Paper # | ED2009-8 |
Volume (vol) | vol.109 |
Number (no) | 16 |
Page | pp.pp.- |
#Pages | 4 |
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