| Presentation | 2009-04-23 Ferroelectric-Gate Thin-Film-Transistor Memory Using Epitaxially Grown Composite-Oxide-Film Yukihiro KANEKO, Hiroyuki TANAKA, Yoshihisa KATO, Yasuhiro SHIMADA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a ferroelectric-gate thin-film transistor (FeTFT) composed of heteroepitaxially stacked oxide materials. A bottom gate electrode of SrRuO_3 (SRO), a ferroelectric film of Pb(Zr,Ti)O_3 (PZT) and a semiconductor film of ZnO are grown on a SrTiO_3 (STO) substrate. Structural characterization shows a heteroepitaxy of the fabricated ZnO/PZT/SRO/STO structure with good crystalline quality and the absence of an interface reaction layer. When the polarization direction of the PZT film is downward, all the electrons across the ZnO film are depleted. When the polarization direction is upward, on the other hand, quasi-two-dimensional electron gas is accumulated at the ZnO/PZT interface. Drain and source electrodes of Pt/Ti are formed on the ZnO film and in-plane conduction at the ZnO/PZT interface is probed. When gate voltages applied to the bottom electrode are swept between -10 and 10V, the on/off ratio of drain currents is higher than 10^5. Such a high on/off ratio is preserved even after 10^5s. In addition, the FeTFT can write and read multi level datum. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectric / ferroelectric-gate field-effect-transistor / ferroelectric memory / ZnO / SrTiO_3 / SrRuO_3 / Pb(Zr,Ti)O_3 / oxide semiconductor |
| Paper # | ED2009-5 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/4/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ferroelectric-Gate Thin-Film-Transistor Memory Using Epitaxially Grown Composite-Oxide-Film |
| Sub Title (in English) | |
| Keyword(1) | ferroelectric |
| Keyword(2) | ferroelectric-gate field-effect-transistor |
| Keyword(3) | ferroelectric memory |
| Keyword(4) | ZnO |
| Keyword(5) | SrTiO_3 |
| Keyword(6) | SrRuO_3 |
| Keyword(7) | Pb(Zr,Ti)O_3 |
| Keyword(8) | oxide semiconductor |
| 1st Author's Name | Yukihiro KANEKO |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation() |
| 2nd Author's Name | Hiroyuki TANAKA |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| 3rd Author's Name | Yoshihisa KATO |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| 4th Author's Name | Yasuhiro SHIMADA |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| Date | 2009-04-23 |
| Paper # | ED2009-5 |
| Volume (vol) | vol.109 |
| Number (no) | 16 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |