Presentation 2009-04-23
Performance and air-stability in hetero-layered field-effect transistors using fullerene
Ken-ichi NAKAYAMA, Takahiro KUSUNOKI, Yong-Jin PU, Junji KIDO,
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Abstract(in English) N-type organic field effect transistors are generally unstable under atmospheric condition. This deterioration is attributed to the interfacial electron trap at the insulator surface. In this study, we achieved air-stable n-type FET by hetero-layered structure composed of hole transporting material and fullerene.
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Keyword(in English) n-type organic field-effect transistor / air stability / hetero-layered structure / fullerene
Paper # ED2009-3
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Committee ED
Conference Date 2009/4/16(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Performance and air-stability in hetero-layered field-effect transistors using fullerene
Sub Title (in English)
Keyword(1) n-type organic field-effect transistor
Keyword(2) air stability
Keyword(3) hetero-layered structure
Keyword(4) fullerene
1st Author's Name Ken-ichi NAKAYAMA
1st Author's Affiliation Department of Organic Device Engineering, Yamagata University()
2nd Author's Name Takahiro KUSUNOKI
2nd Author's Affiliation Department of Organic Device Engineering, Yamagata University
3rd Author's Name Yong-Jin PU
3rd Author's Affiliation Department of Organic Device Engineering, Yamagata University
4th Author's Name Junji KIDO
4th Author's Affiliation Department of Organic Device Engineering, Yamagata University
Date 2009-04-23
Paper # ED2009-3
Volume (vol) vol.109
Number (no) 16
Page pp.pp.-
#Pages 2
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