Presentation | 2009-04-23 Performance and air-stability in hetero-layered field-effect transistors using fullerene Ken-ichi NAKAYAMA, Takahiro KUSUNOKI, Yong-Jin PU, Junji KIDO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | N-type organic field effect transistors are generally unstable under atmospheric condition. This deterioration is attributed to the interfacial electron trap at the insulator surface. In this study, we achieved air-stable n-type FET by hetero-layered structure composed of hole transporting material and fullerene. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | n-type organic field-effect transistor / air stability / hetero-layered structure / fullerene |
Paper # | ED2009-3 |
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Committee | ED |
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Conference Date | 2009/4/16(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Performance and air-stability in hetero-layered field-effect transistors using fullerene |
Sub Title (in English) | |
Keyword(1) | n-type organic field-effect transistor |
Keyword(2) | air stability |
Keyword(3) | hetero-layered structure |
Keyword(4) | fullerene |
1st Author's Name | Ken-ichi NAKAYAMA |
1st Author's Affiliation | Department of Organic Device Engineering, Yamagata University() |
2nd Author's Name | Takahiro KUSUNOKI |
2nd Author's Affiliation | Department of Organic Device Engineering, Yamagata University |
3rd Author's Name | Yong-Jin PU |
3rd Author's Affiliation | Department of Organic Device Engineering, Yamagata University |
4th Author's Name | Junji KIDO |
4th Author's Affiliation | Department of Organic Device Engineering, Yamagata University |
Date | 2009-04-23 |
Paper # | ED2009-3 |
Volume (vol) | vol.109 |
Number (no) | 16 |
Page | pp.pp.- |
#Pages | 2 |
Date of Issue |