Presentation 2009-04-17
Electrostatic-Discharge Tolerance of AlGaInAs Laser Diodes
Hiroyuki ICHIKAWA, Chie FUKUDA, Shinji MATSUKAWA, Kotaro HAMADA, Nobuyuki IKOMA, Takashi NAKABAYASHI,
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Abstract(in English) This is a report on electrostatic discharge (ESD)-induced degradation of AlGaInAs/InP laser diodes. We found that the dominant ESD-induced degradation mechanism of AlGaInAs/InP buried heterostructure laser diodes was melting of an active layer by light absorption. We obtained sufficient ESD tolerance of higher than 1kV by introduction of facet passivation.
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Keyword(in English) AlGaInAs / InP / ESD
Paper # R2009-2,CPM2009-2,OPE2009-2
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Conference Information
Committee CPM
Conference Date 2009/4/10(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrostatic-Discharge Tolerance of AlGaInAs Laser Diodes
Sub Title (in English)
Keyword(1) AlGaInAs
Keyword(2) InP
Keyword(3) ESD
1st Author's Name Hiroyuki ICHIKAWA
1st Author's Affiliation Transmission Devices R & D Lab., Sumitomo Electric Industries, Ltd.()
2nd Author's Name Chie FUKUDA
2nd Author's Affiliation Transmission Devices R & D Lab., Sumitomo Electric Industries, Ltd.
3rd Author's Name Shinji MATSUKAWA
3rd Author's Affiliation Analysis Technology Reserch Center, Sumitomo Electric Industries, Ltd.
4th Author's Name Kotaro HAMADA
4th Author's Affiliation Analysis Technology Reserch Center, Sumitomo Electric Industries, Ltd.
5th Author's Name Nobuyuki IKOMA
5th Author's Affiliation Transmission Devices R & D Lab., Sumitomo Electric Industries, Ltd.
6th Author's Name Takashi NAKABAYASHI
6th Author's Affiliation Transmission Devices R & D Lab., Sumitomo Electric Industries, Ltd.
Date 2009-04-17
Paper # R2009-2,CPM2009-2,OPE2009-2
Volume (vol) vol.109
Number (no) 7
Page pp.pp.-
#Pages 4
Date of Issue