Presentation 2009-05-22
Crystal Growth of GaAs/AlGaAs Quantum Wells on GaAs (110) and Evaluation of Electron Spin Relaxation Times
Satoshi IBA, Shinji KOH, Hitoshi KAWAGUCHI,
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Abstract(in English) III-V semiconductor quantum wells on (110)-oriented substrates have attracted significant attention as potential systems for spintronic devices since dramatically long electron spin relaxation time τ_s in (110) GaAs/AlGaAs multiple quantum wells (MQWs) was demonstrated. In order to realize spintronic devices on (110)-oriented substrates, we first carried out optimization of molecular beam epitaxy (MBE) growth conditions on GaAs (110) substrates. In (110)-oriented GaAs/AlGaAs MQWs fabricated using the optimized growth condition, we obtained ten times longer τ_s, (~1.8ns) than that in (100) MQWs. By introducing growth interruption at hetero-interfaces during MBE growth, we successfully fabricated the MQWs with smoother interfaces, resulting in even longer τ_s in the MQWs (~2.1ns).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) (110)-oriented Quantum Well / Spin Relaxation / Growth Interruption
Paper # LQE2009-9
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Committee LQE
Conference Date 2009/5/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Crystal Growth of GaAs/AlGaAs Quantum Wells on GaAs (110) and Evaluation of Electron Spin Relaxation Times
Sub Title (in English)
Keyword(1) (110)-oriented Quantum Well
Keyword(2) Spin Relaxation
Keyword(3) Growth Interruption
1st Author's Name Satoshi IBA
1st Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology()
2nd Author's Name Shinji KOH
2nd Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
3rd Author's Name Hitoshi KAWAGUCHI
3rd Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
Date 2009-05-22
Paper # LQE2009-9
Volume (vol) vol.109
Number (no) 49
Page pp.pp.-
#Pages 6
Date of Issue