Presentation 2009-05-22
Progress in Distributed-Reflector (DR) Lasers with Wirelke Active Regions : Low threshold, high efficiency, and strong durability against reflected waves
Takahiko SHINDO, SeungHun LEE, Noriaki TAJIMA, Daisuke TAKAHASHI, Nobuhiko NISHIYAMA, Shigehisa ARAI,
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Abstract(in English) We have demonstrated low-threshold and a high efficiency distributed reflector (DR) laser with wirelike active regions as well as its high single-mode stability. From theoretical investigations, we confirmed that much lower threshold current operation can be realized by introducing a phase-shift region in the active DFB section, and achieved low threshold current operation with phase-shifted DR laser Furthermore we reduced the waveguide loss by reducing the doping concentration of n-InP layer in the embedding growth process, and achieved much higher differential quantum efficiency. Required currents for 1-mW output power of 4.2 and 3.6-mA were obtained for uniform and phase-shifted DR lasers, respectively. Furthermore the durability against reflected waves of the DR laser was evaluated by measuring the relative intensity noise (RIN). As the result an isolator-free 10-km transmission by 2.5Gb/s directly modulated DR laser was demonstrated for optical feedback power of -13.5dB with a low power penalty of 2dB.
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Keyword(in English) Distributed-Reflector (DR) Laser / Distributed-Feedback (DFB) Laser / Durability against reflected waves
Paper # LQE2009-3
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Committee LQE
Conference Date 2009/5/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Progress in Distributed-Reflector (DR) Lasers with Wirelke Active Regions : Low threshold, high efficiency, and strong durability against reflected waves
Sub Title (in English)
Keyword(1) Distributed-Reflector (DR) Laser
Keyword(2) Distributed-Feedback (DFB) Laser
Keyword(3) Durability against reflected waves
1st Author's Name Takahiko SHINDO
1st Author's Affiliation Tokyo Institeute of Technology Quantum Nono Electronis Research Center:Dept. of Electrical and Electronic Engineering()
2nd Author's Name SeungHun LEE
2nd Author's Affiliation Tokyo Institeute of Technology Quantum Nono Electronis Research Center:Dept. of Electrical and Electronic Engineering
3rd Author's Name Noriaki TAJIMA
3rd Author's Affiliation Tokyo Institeute of Technology Quantum Nono Electronis Research Center:Dept. of Electrical and Electronic Engineering
4th Author's Name Daisuke TAKAHASHI
4th Author's Affiliation Tokyo Institeute of Technology Quantum Nono Electronis Research Center:Dept. of Electrical and Electronic Engineering
5th Author's Name Nobuhiko NISHIYAMA
5th Author's Affiliation Dept. of Electrical and Electronic Engineering
6th Author's Name Shigehisa ARAI
6th Author's Affiliation Tokyo Institeute of Technology Quantum Nono Electronis Research Center:Dept. of Electrical and Electronic Engineering
Date 2009-05-22
Paper # LQE2009-3
Volume (vol) vol.109
Number (no) 49
Page pp.pp.-
#Pages 6
Date of Issue