Presentation 2009-02-27
Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device
Hiroya IKEDA, Faiz SALLEH, Kiyosumi ASAI, Akihiro ISHIDA,
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Abstract(in English) In order to develop a high-efficiency thermoelectric device, we have investigated the thermoelectric characteristics of Si nanostructures. We have measured the Seebeck coefficient for ultrathin SOI (silicon on insulator) layers with various thickness and carrier concentration to clarify the electron confinement effect in the thermoelectric characteristics. In the present paper, we show the theoretically-evaluated Seebeck coefficient for Si, based on the Boltzmann transport equation, and demonstrate a new method for the Seebeck-coefficient measurement using a KFM (Kelvin-probe force microscopy) technique.
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Keyword(in English) thermoelectricity / nanostructure / SOI wafer / Seebeck coefficient / Kelvin-probe force microscope
Paper # ED2008-238,SDM2008-230
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Committee ED
Conference Date 2009/2/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device
Sub Title (in English)
Keyword(1) thermoelectricity
Keyword(2) nanostructure
Keyword(3) SOI wafer
Keyword(4) Seebeck coefficient
Keyword(5) Kelvin-probe force microscope
1st Author's Name Hiroya IKEDA
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Faiz SALLEH
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Kiyosumi ASAI
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Akihiro ISHIDA
4th Author's Affiliation Faculty of Engineering, Shizuoka University
Date 2009-02-27
Paper # ED2008-238,SDM2008-230
Volume (vol) vol.108
Number (no) 437
Page pp.pp.-
#Pages 5
Date of Issue