Presentation 2009-02-27
Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Device
Daisuke NAKATA, RAHMAN Shaharin Fadzli Abd, Yuta SHIRATORI, Seiya KASAI,
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Abstract(in English) Three-branch nanowire junction devices show nonlinear electrical characteristics from the low temperature to the room temperature, and they are expected to be applied to logic and high frequency circuits. In such application, understanding the mechanism and control of characteristic are necessary. In this study GaAs-based three-branch nanowire junction devises having Schottky wrap gates are fabricated and characterized in detail, including the effect of Schottky wrap gate and nanowire length on nonlinear characteristics and operation speed.
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Keyword(in English) Three-Branch Nanowire Junction Device / Nonlinear Characteristic / Operation Speed / GaAs / Wrap Gate(WPG)
Paper # ED2008-235,SDM2008-227
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Committee ED
Conference Date 2009/2/19(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Device
Sub Title (in English)
Keyword(1) Three-Branch Nanowire Junction Device
Keyword(2) Nonlinear Characteristic
Keyword(3) Operation Speed
Keyword(4) GaAs
Keyword(5) Wrap Gate(WPG)
1st Author's Name Daisuke NAKATA
1st Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE), Hokkaido University:Graduate School of Information Science & Technology, Hokkaido University()
2nd Author's Name RAHMAN Shaharin Fadzli Abd
2nd Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE), Hokkaido University:Graduate School of Information Science & Technology, Hokkaido University
3rd Author's Name Yuta SHIRATORI
3rd Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE), Hokkaido University:Graduate School of Information Science & Technology, Hokkaido University
4th Author's Name Seiya KASAI
4th Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE), Hokkaido University:Graduate School of Information Science & Technology, Hokkaido University:PRESTO, JST
Date 2009-02-27
Paper # ED2008-235,SDM2008-227
Volume (vol) vol.108
Number (no) 437
Page pp.pp.-
#Pages 6
Date of Issue