| Presentation | 2009-02-27 Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo JEONG, Jiezhi CHEN, Takuya SARAYA, Toshiro HIRAMOTO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation than NW nFET is observed. To enhance the MOSFET mobility, tensile and compressive direction is beneficial to transverse and longitudinal strain, respectively. The strain effect is decreased as NW width becomes narrower due to small effective mass modulation at narrow NW pFET. In the SHT, Coulomb oscillation characteristics are modulated by the strain and after oscillation vanishes current modulation converges to constant value due to drift current in SHT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nanowire MOSFET / Single-hole transistor / Uniaxial strain / Mobility enhancement / Effective mass / Tunneling probability / Quantum energy level |
| Paper # | ED2008-234,SDM2008-226 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/2/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain |
| Sub Title (in English) | |
| Keyword(1) | Nanowire MOSFET |
| Keyword(2) | Single-hole transistor |
| Keyword(3) | Uniaxial strain |
| Keyword(4) | Mobility enhancement |
| Keyword(5) | Effective mass |
| Keyword(6) | Tunneling probability |
| Keyword(7) | Quantum energy level |
| 1st Author's Name | YeonJoo JEONG |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
| 2nd Author's Name | Jiezhi CHEN |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 3rd Author's Name | Takuya SARAYA |
| 3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 4th Author's Name | Toshiro HIRAMOTO |
| 4th Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| Date | 2009-02-27 |
| Paper # | ED2008-234,SDM2008-226 |
| Volume (vol) | vol.108 |
| Number (no) | 437 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |