| Presentation | 2009-02-27 Double-dot single-electron transistor fabricated in silicon nanowire Mingyu JO, Takuya KAIZAWA, Masashi ARITA, Akira FUJIWARA, Yasuo TAKAHASHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent oxidation when a one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate is oxidized. In this report, we demonstrate a simple fabrication method for the double-dot Si SETs when we use specially designed Si nanowires formed on SOI substrates. We confirmed the double-dot formation by comparing the measured electrical characteristics of the device with the results of simulation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single electron / Coulomb blockade / double dot |
| Paper # | ED2008-233,SDM2008-225 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/2/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Double-dot single-electron transistor fabricated in silicon nanowire |
| Sub Title (in English) | |
| Keyword(1) | single electron |
| Keyword(2) | Coulomb blockade |
| Keyword(3) | double dot |
| 1st Author's Name | Mingyu JO |
| 1st Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ.() |
| 2nd Author's Name | Takuya KAIZAWA |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| 3rd Author's Name | Masashi ARITA |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| 4th Author's Name | Akira FUJIWARA |
| 4th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 5th Author's Name | Yasuo TAKAHASHI |
| 5th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| Date | 2009-02-27 |
| Paper # | ED2008-233,SDM2008-225 |
| Volume (vol) | vol.108 |
| Number (no) | 437 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |