| Presentation | 2009-02-27 Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration Yusuke TOMODA, Watari KUME, Michinobu HANADA, Keisuke TAKAHASHI, Jun-ichi SHIRAKASHI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps with the separations of less than 10nm. This technique is based on electromigration induced by field emission current. Here, we investigated the dependence of tunnel resistance on the shape of nanogap electrodes and initial gap separation. The initial Ni nanogap electrodes having asymmetrical shape with the separation of 20-70nm were fabricated by electron-beam lithography and lift-off process. In the nanogaps with asymmetrical shape, the tunnel resistance was controlled by the magnitude of the preset current during field-emission-induced electromigration and decreased from the order of 100TΩ to 100kΩ with increasing the preset current from 1nA to 150μA. This tendency was quite similar to that of nanogaps with symmetrical shape. In particular, the tunnel resistance after the electromigration was less dependent on the initial gap separation and was completely determined by the preset current. Furthermore, Ni-based SETs were fabricated using the electromigration. Charging energy of the SETs decreases with increasing the preset current, suggesting that the size of island electrode can be controlled by the magnitude of the preset current passing through the gap. The results suggest that it is possible to fabricate nanoscale devices by field-emission-induced electromigration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | electromigration / field-emission-current / nanogap / single-electron transistor |
| Paper # | ED2008-232,SDM2008-224 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2009/2/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration |
| Sub Title (in English) | |
| Keyword(1) | electromigration |
| Keyword(2) | field-emission-current |
| Keyword(3) | nanogap |
| Keyword(4) | single-electron transistor |
| 1st Author's Name | Yusuke TOMODA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology() |
| 2nd Author's Name | Watari KUME |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology |
| 3rd Author's Name | Michinobu HANADA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology |
| 4th Author's Name | Keisuke TAKAHASHI |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology |
| 5th Author's Name | Jun-ichi SHIRAKASHI |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology |
| Date | 2009-02-27 |
| Paper # | ED2008-232,SDM2008-224 |
| Volume (vol) | vol.108 |
| Number (no) | 437 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |