| Presentation | 2009-02-26 Characteristics of Single Electron Transistor and Turnstile With Input Discretizer Masashi TAKIGUCHI, Shota HAYAMI, Masaki OTSUKA, Akio KAWAI, Masataka MORIYA, Tadayuki KOBAYASHI, Hiroshi SHIMADA, Yoshinao MIZUGAKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this report, we propose an input discretizer for single-electron devices. The input discretizer comprises one small tunnel junction and two capacitors. When the two capacitors have the identical capacitance, the input discretizer discretizes the gate charge with interval of a half of the elementary charge e, which enhances the performance of single-electron devices. A single-electron transistor with the input discretizer has abrupt switchings of the Coulomb blockade thresholds, resulting in steep responses to the input signal. A single-electron turnstile with the input discretizer enhances its operation margins for generating current plateaus. Both analytical and numerical results are demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Coulomb blockade / single-electron box / single-electron transistor / single-electron turnstile |
| Paper # | ED2008-229,SDM2008-221 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/2/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristics of Single Electron Transistor and Turnstile With Input Discretizer |
| Sub Title (in English) | |
| Keyword(1) | Coulomb blockade |
| Keyword(2) | single-electron box |
| Keyword(3) | single-electron transistor |
| Keyword(4) | single-electron turnstile |
| 1st Author's Name | Masashi TAKIGUCHI |
| 1st Author's Affiliation | Department of Electronic Engineering, The University of Electro-Communications() |
| 2nd Author's Name | Shota HAYAMI |
| 2nd Author's Affiliation | Department of Electronic Engineering, The University of Electro-Communications |
| 3rd Author's Name | Masaki OTSUKA |
| 3rd Author's Affiliation | Department of Electronic Engineering, The University of Electro-Communications |
| 4th Author's Name | Akio KAWAI |
| 4th Author's Affiliation | Department of Electronic Engineering, The University of Electro-Communications |
| 5th Author's Name | Masataka MORIYA |
| 5th Author's Affiliation | Department of Electronic Engineering, The University of Electro-Communications |
| 6th Author's Name | Tadayuki KOBAYASHI |
| 6th Author's Affiliation | Department of Electronic Engineering, The University of Electro-Communications |
| 7th Author's Name | Hiroshi SHIMADA |
| 7th Author's Affiliation | Department of Applied Physics and Chemistry, The University of Electro-Communications |
| 8th Author's Name | Yoshinao MIZUGAKI |
| 8th Author's Affiliation | Department of Electronic Engineering, The University of Electro-Communications |
| Date | 2009-02-26 |
| Paper # | ED2008-229,SDM2008-221 |
| Volume (vol) | vol.108 |
| Number (no) | 437 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |