Presentation 2009-02-26
Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Yusuke KITAUCHI, Junichi MOTOHISA, Yasunori Kobayashi, Takashi FUKUI,
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Abstract(in English) Recently, semiconductor nanowires have attracted much interest because of their unique properties. However, most of the nanowires have rotational twins or stacking faults, which might degrade their quality. In addition, they could exhibit crystal structures which are different from those in the bulk phase. Thus, it is important to clarify the formation mechanisms of defects and to control crystal structures. In this report, we describe the growth of InP nanowires by selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they shows both zincblende and wurtzite structure depending on the growth conditions.
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Keyword(in English) nanowire / InP / SA-MOVPE / zinc-blend / wurtizte / structural transition
Paper # ED2008-227,SDM2008-219
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Committee ED
Conference Date 2009/2/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Sub Title (in English)
Keyword(1) nanowire
Keyword(2) InP
Keyword(3) SA-MOVPE
Keyword(4) zinc-blend
Keyword(5) wurtizte
Keyword(6) structural transition
1st Author's Name Yusuke KITAUCHI
1st Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE) and Graduate School of Information Science and Technology, Hokkaido University()
2nd Author's Name Junichi MOTOHISA
2nd Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE) and Graduate School of Information Science and Technology, Hokkaido University
3rd Author's Name Yasunori Kobayashi
3rd Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE) and Graduate School of Information Science and Technology, Hokkaido University
4th Author's Name Takashi FUKUI
4th Author's Affiliation Research Center for Integrated Quantum Electronics(RCIQE) and Graduate School of Information Science and Technology, Hokkaido University
Date 2009-02-26
Paper # ED2008-227,SDM2008-219
Volume (vol) vol.108
Number (no) 437
Page pp.pp.-
#Pages 4
Date of Issue