| Presentation | 2009-02-26 Fabrication and application for Spin injection with Magnetite/InAs heterostructure Takeshi Ejiri, J. Bubesh Babu, Kanji Yoh, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The realization of high efficiency spin-injection is necessary for the performance of spin-transistor, although spin-transistor is included as key-device of spintronics that actively utilize electron spin for information processing. We target the establishing of the technology of spin-injection from magnetite, which is predicted high spin polarization as ideal half-metal, into semiconductor. First, when we measured the temperature dependence of Magnetite film, the change of resistance was observed at 120K. This is indicated Verwey transition of Magnetite. And we measured the magnetic property of Magnetite film with SQUID. As a result, Hysteresis loop was measured at 300K. Next, about fabrication of spin injection devices with Magnetite electrodes, we explain this process with epitaxial graphene layers on SiC and InAs/InAlAs HEMT sample inserted InAs channel. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Spintronics / Spin injection / Spin transistor |
| Paper # | ED2008-226,SDM2008-218 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2009/2/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and application for Spin injection with Magnetite/InAs heterostructure |
| Sub Title (in English) | |
| Keyword(1) | Spintronics |
| Keyword(2) | Spin injection |
| Keyword(3) | Spin transistor |
| 1st Author's Name | Takeshi Ejiri |
| 1st Author's Affiliation | RCIQE, Hokkaido University() |
| 2nd Author's Name | J. Bubesh Babu |
| 2nd Author's Affiliation | RCIQE, Hokkaido University |
| 3rd Author's Name | Kanji Yoh |
| 3rd Author's Affiliation | RCIQE, Hokkaido University |
| Date | 2009-02-26 |
| Paper # | ED2008-226,SDM2008-218 |
| Volume (vol) | vol.108 |
| Number (no) | 437 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |