| Presentation | 2009-02-26 Eptaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Maki Suemitsu, Eiichi Sano, Maxim Ryzhii, Victor Ryzhii, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electron devices. Exfoliation from highly-oriented pyrolitic graphite and surface decomposition of epitaxial SiC are wellknown as graphene formation technologies. However, when it is introduced to the post-CMOS VLSIs as the key material, introduction of Si substrate as the starting material as well as practically low-temperature, reproducible growth technology are mandatory. To cope with those issues we developed "graphene-on-silicon" material growth technology consisting of epitaxial growth of 3C-SiC onto Si substrate using organo-silan gas-source MBE and surface decomposition processes. By utilizing such a new GOS material to form the channel with graphene, we succeeded in the transistor operation. This is the first step ahead; we have recognized existing subjects for ultra-high performance, mass-productive device fabrication. The exceptional electronic properties of graphene can devise wide variety of new devices including plasmonic devices and terahertz lasers which will also be described. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Graphene / Si / 3C-SiC / MBE / GOS / FET / Terahertz |
| Paper # | ED2008-224,SDM2008-216 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/2/19(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Eptaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | Si |
| Keyword(3) | 3C-SiC |
| Keyword(4) | MBE |
| Keyword(5) | GOS |
| Keyword(6) | FET |
| Keyword(7) | Terahertz |
| 1st Author's Name | Taiichi Otsuji |
| 1st Author's Affiliation | RIEC Tohoku University() |
| 2nd Author's Name | Tetsuya Suemitsu |
| 2nd Author's Affiliation | RIEC Tohoku University |
| 3rd Author's Name | Hyon-Choru Kang |
| 3rd Author's Affiliation | RIEC Tohoku University |
| 4th Author's Name | Hiromi Karasawa |
| 4th Author's Affiliation | RIEC Tohoku University |
| 5th Author's Name | Yu Miyamoto |
| 5th Author's Affiliation | RIEC Tohoku University |
| 6th Author's Name | Hiroyuki Handa |
| 6th Author's Affiliation | RIEC Tohoku University |
| 7th Author's Name | Maki Suemitsu |
| 7th Author's Affiliation | RIEC Tohoku University |
| 8th Author's Name | Eiichi Sano |
| 8th Author's Affiliation | RCIQE Hokkaido University |
| 9th Author's Name | Maxim Ryzhii |
| 9th Author's Affiliation | CNEL University of Aizu |
| 10th Author's Name | Victor Ryzhii |
| 10th Author's Affiliation | CNEL University of Aizu |
| Date | 2009-02-26 |
| Paper # | ED2008-224,SDM2008-216 |
| Volume (vol) | vol.108 |
| Number (no) | 437 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |