Presentation | 2008-12-12 High-Speed Direct Modulation of 1.3-μm AlGaInAs Multiple-Quantum-Well DFB Lasers with Semi-Insulating Current-Blocking Layers Koji OTSUBO, Manabu MATSUDA, Kan TAKADA, Shigekazu OKUMURA, Mitsuru EKAWA, Hiromasa TANAKA, Satoshi IDE, Kazuyuki MORI, Tsuyoshi YAMAMOTO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | High-speed light sources with low cost and consumption power are highly anticipated for future high bit-rate optical transmission systems, such as over-10-Gb/s Ethernet and so on. 1.3-μm AlGaInAs multiple-quantum-well (MQW) lasers are attractive for such application, owing to their band structure having large conduction-band offset. We combined them with semi-insulating buried-heterostructure (SI-BH) and short-cavity structure in order to operate them with high-speed and low driving current. We report high-speed direct modulation of 1.3-μm SI-BH AlGaInAs MQW DFB lasers. We show the results of 25- and 40-Gb/s direct modulation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 1.3μm / AlGaInAs multiple-quantum-well / semi-insulating buried-heterostructure / directly-modulated lasers / 25Gb/s / 40Gb/s |
Paper # | LQE2008-140 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2008/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High-Speed Direct Modulation of 1.3-μm AlGaInAs Multiple-Quantum-Well DFB Lasers with Semi-Insulating Current-Blocking Layers |
Sub Title (in English) | |
Keyword(1) | 1.3μm |
Keyword(2) | AlGaInAs multiple-quantum-well |
Keyword(3) | semi-insulating buried-heterostructure |
Keyword(4) | directly-modulated lasers |
Keyword(5) | 25Gb/s |
Keyword(6) | 40Gb/s |
1st Author's Name | Koji OTSUBO |
1st Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Ltd.:Optoelectronic Industry and Technology Development Association() |
2nd Author's Name | Manabu MATSUDA |
2nd Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Ltd.:Optoelectronic Industry and Technology Development Association |
3rd Author's Name | Kan TAKADA |
3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
4th Author's Name | Shigekazu OKUMURA |
4th Author's Affiliation | Fujitsu Laboratories Ltd. |
5th Author's Name | Mitsuru EKAWA |
5th Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Ltd.:Optoelectronic Industry and Technology Development Association |
6th Author's Name | Hiromasa TANAKA |
6th Author's Affiliation | Fujitsu Ltd. |
7th Author's Name | Satoshi IDE |
7th Author's Affiliation | Fujitsu Laboratories Ltd. |
8th Author's Name | Kazuyuki MORI |
8th Author's Affiliation | Fujitsu Ltd. |
9th Author's Name | Tsuyoshi YAMAMOTO |
9th Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Ltd.:Optoelectronic Industry and Technology Development Association |
Date | 2008-12-12 |
Paper # | LQE2008-140 |
Volume (vol) | vol.108 |
Number (no) | 351 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |