Presentation 2008-12-12
Development of II-VI materials on InP substrates for green semiconductor laser diodes
Ichirou NOMURA, Katsumi KISHINO, Tomoya EBISAWA, Shun KUSHIDA, Kunihiko TASAI, Hitoshi NAKAMURA, Tsunenori ASATSUMA, Hiroshi NAKAJIMA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) MgZnCdSe, BeZnTe, and BeZnSeTe II-VI compound semiconductors grown on InP substrates are very attractive for middle visible range, especially green light emitting devices. We have developed these materials and emitting devices composed of BeZnSeTe active, MgSe/ZnCdSe superlattice (SL) n-cladding, and MgSeBeZnTe SL p-cladding layers. Long lifetime operations beyond 5000h were achieved for the devices, which shows a remarkable improvement of the aging characteristic of II-VI devices. We succeeded in photopumped green lasing at room temperature for the double heterostructures having a BeZnSeTe active layer to indicate a high potentiality of BeZnSeTe as an active layer of green laser diodes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InP substrate / II-VI compound semiconductor / green emission / light emitting device / long lifetime / laser / photopumped lasing
Paper # LQE2008-138
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Conference Information
Committee LQE
Conference Date 2008/12/5(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of II-VI materials on InP substrates for green semiconductor laser diodes
Sub Title (in English)
Keyword(1) InP substrate
Keyword(2) II-VI compound semiconductor
Keyword(3) green emission
Keyword(4) light emitting device
Keyword(5) long lifetime
Keyword(6) laser
Keyword(7) photopumped lasing
1st Author's Name Ichirou NOMURA
1st Author's Affiliation Faculty of Science and Technology, Sophia University()
2nd Author's Name Katsumi KISHINO
2nd Author's Affiliation Faculty of Science and Technology, Sophia University
3rd Author's Name Tomoya EBISAWA
3rd Author's Affiliation Faculty of Science and Technology, Sophia University
4th Author's Name Shun KUSHIDA
4th Author's Affiliation Faculty of Science and Technology, Sophia University
5th Author's Name Kunihiko TASAI
5th Author's Affiliation Faculty of Science and Technology, Sophia University
6th Author's Name Hitoshi NAKAMURA
6th Author's Affiliation Faculty of Science and Technology, Sophia University
7th Author's Name Tsunenori ASATSUMA
7th Author's Affiliation Faculty of Science and Technology, Sophia University
8th Author's Name Hiroshi NAKAJIMA
8th Author's Affiliation Faculty of Science and Technology, Sophia University
Date 2008-12-12
Paper # LQE2008-138
Volume (vol) vol.108
Number (no) 351
Page pp.pp.-
#Pages 6
Date of Issue