| Presentation | 2008-12-12 Lateral Current Injection Type GaInAsP Laser on Semi-insulating Substrate for Semiconductor Membrane Laser Tadashi OKUMURA, Munetaka KUROKAWA, Mizuki SHIRAO, Daisuke KONDO, Hitomi ITO, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Semiconductor membrane laser is very promising for low consumption power operation of edge-emitting type light sources due to an enhanced modal gain in high-index contrast waveguide structures. With aiming at a realization of injection type membrane lasers, we fabricated lateral current injection (LCI) type Fabry-Perot cavity lasers by multi-step regrowth of p-i-n structure on the sides of a thin GaInAsP core layer grown on a semi insulating substrate. As the result, we realized a room-temperature (RT) operation of the LCI-FP lasers with a threshold current of 105mA, which corresponds to a threshold current density of 1.3kA/cm^2, for the stripe width of 5.4μm and the cavity length of 1.47mm. Since it showed higher transverse mode operation due to wide stripe width, narrow stripe devices were fabricated from aspects of fundamental transverse mode operation as well as better injection efficiency of the LCI structure. As the result, threshold current of 49mA, (threshold current density of 3.0kA/cm^2) as well as a fundamental transverse mode operation was achieved for the stripe width of 2.0μm and the cavity length of 805μm.. Thoretical investigations of the current injection efficiency in the LCI structure and normalized resistance as a function of the stripe width were also carried out. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semiconductor membrane laser / Lateral current injection / High index contrast waveguide / Laser on semi-insulating substrate |
| Paper # | LQE2008-137 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Lateral Current Injection Type GaInAsP Laser on Semi-insulating Substrate for Semiconductor Membrane Laser |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor membrane laser |
| Keyword(2) | Lateral current injection |
| Keyword(3) | High index contrast waveguide |
| Keyword(4) | Laser on semi-insulating substrate |
| 1st Author's Name | Tadashi OKUMURA |
| 1st Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology() |
| 2nd Author's Name | Munetaka KUROKAWA |
| 2nd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 3rd Author's Name | Mizuki SHIRAO |
| 3rd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 4th Author's Name | Daisuke KONDO |
| 4th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 5th Author's Name | Hitomi ITO |
| 5th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 6th Author's Name | Nobuhiko NISHIYAMA |
| 6th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 7th Author's Name | Shigehisa ARAI |
| 7th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Dept. of Electrical and Electronic Engineering Tokyo Institute of Technology |
| Date | 2008-12-12 |
| Paper # | LQE2008-137 |
| Volume (vol) | vol.108 |
| Number (no) | 351 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |