Presentation 2008-12-12
High power 1.3μm 25Gbps Electro-absorption Modulator integrated LD
Hiroyuki TAKAHASHI, Tomonori SHIMAMURA, Takashi SUGIYAMA, Munechika KUBOTA, Koji NAKAMURA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A 1.3μm-EA Modulator integrated LD (EML) at 25Gbit/s over 30km transmission without SOA was demonstrated for 100Gbps Ethernet applications. The EML with average output power 6.5dBm, good eye opening and dynamic extinction ratio of over 7.6dB at 35℃ was realized.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Electro-absorption Modulator integrated LD / ridge type LD / 100G Ethernet / high power
Paper # LQE2008-128
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Conference Information
Committee LQE
Conference Date 2008/12/5(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High power 1.3μm 25Gbps Electro-absorption Modulator integrated LD
Sub Title (in English)
Keyword(1) Electro-absorption Modulator integrated LD
Keyword(2) ridge type LD
Keyword(3) 100G Ethernet
Keyword(4) high power
1st Author's Name Hiroyuki TAKAHASHI
1st Author's Affiliation Oki Electoric Industry Co., Ltd.()
2nd Author's Name Tomonori SHIMAMURA
2nd Author's Affiliation Oki Semiconductor Co., Ltd.
3rd Author's Name Takashi SUGIYAMA
3rd Author's Affiliation Oki Semiconductor Co., Ltd.
4th Author's Name Munechika KUBOTA
4th Author's Affiliation Oki Semiconductor Co., Ltd.
5th Author's Name Koji NAKAMURA
5th Author's Affiliation Oki Electoric Industry Co., Ltd.
Date 2008-12-12
Paper # LQE2008-128
Volume (vol) vol.108
Number (no) 351
Page pp.pp.-
#Pages 4
Date of Issue