Presentation | 2008-12-12 High power 1.3μm 25Gbps Electro-absorption Modulator integrated LD Hiroyuki TAKAHASHI, Tomonori SHIMAMURA, Takashi SUGIYAMA, Munechika KUBOTA, Koji NAKAMURA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 1.3μm-EA Modulator integrated LD (EML) at 25Gbit/s over 30km transmission without SOA was demonstrated for 100Gbps Ethernet applications. The EML with average output power 6.5dBm, good eye opening and dynamic extinction ratio of over 7.6dB at 35℃ was realized. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Electro-absorption Modulator integrated LD / ridge type LD / 100G Ethernet / high power |
Paper # | LQE2008-128 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2008/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High power 1.3μm 25Gbps Electro-absorption Modulator integrated LD |
Sub Title (in English) | |
Keyword(1) | Electro-absorption Modulator integrated LD |
Keyword(2) | ridge type LD |
Keyword(3) | 100G Ethernet |
Keyword(4) | high power |
1st Author's Name | Hiroyuki TAKAHASHI |
1st Author's Affiliation | Oki Electoric Industry Co., Ltd.() |
2nd Author's Name | Tomonori SHIMAMURA |
2nd Author's Affiliation | Oki Semiconductor Co., Ltd. |
3rd Author's Name | Takashi SUGIYAMA |
3rd Author's Affiliation | Oki Semiconductor Co., Ltd. |
4th Author's Name | Munechika KUBOTA |
4th Author's Affiliation | Oki Semiconductor Co., Ltd. |
5th Author's Name | Koji NAKAMURA |
5th Author's Affiliation | Oki Electoric Industry Co., Ltd. |
Date | 2008-12-12 |
Paper # | LQE2008-128 |
Volume (vol) | vol.108 |
Number (no) | 351 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |