Presentation | 2008-11-28 280nm-band InAlGaN-based high-power UV LEDs Hideki Hirayama, Sachie Fujikawa, Takayoshi Takano, Kenji Tsubaki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Quaternary InAlGaN alloy is attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs), because efficient UV emission can be obtained due to In-incorporation effects. In this study, we succeeded in the growth of high-quality InAlGaN with high-Al-content (>50%) by using quite low growth rate. We also revealed that the oxygen impurity concentration was significantly reduced and the surface roughness was improved for the quaternary InAlGaN by introducing the light-doping of Si. At last, we demonstrated extremely high internal quantum efficiency (>80%) for 280nm-band InAlGaN quantum wells (QWs) at room temperature (RT). We fabricated a 280nm-band InAlGaN-based LED on an AlN/sapphire template. The maximum output power and the external quantum efficiency (EQE) were 10.6mW and 1.2%, respectively, under RT CW operation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | quaternary InAlGaN / UV-LED / external quantum efficiency / In segregation effect |
Paper # | ED2008-169,CPM2008-118,LQE2008-113 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2008/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 280nm-band InAlGaN-based high-power UV LEDs |
Sub Title (in English) | |
Keyword(1) | quaternary InAlGaN |
Keyword(2) | UV-LED |
Keyword(3) | external quantum efficiency |
Keyword(4) | In segregation effect |
1st Author's Name | Hideki Hirayama |
1st Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST() |
2nd Author's Name | Sachie Fujikawa |
2nd Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST |
3rd Author's Name | Takayoshi Takano |
3rd Author's Affiliation | RIKEN:Panasonic Electric Works Co., Ltd |
4th Author's Name | Kenji Tsubaki |
4th Author's Affiliation | RIKEN:Panasonic Electric Works Co., Ltd |
Date | 2008-11-28 |
Paper # | ED2008-169,CPM2008-118,LQE2008-113 |
Volume (vol) | vol.108 |
Number (no) | 323 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |