| Presentation | 2008-11-27 270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki, Norihiko Kamata, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 250-280nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractive much attention for the application to sterilization or medical use. The realization of low threading dislocation density (TDD) AlN template on sapphire substrate is considerably important in order to realize high-efficiency and high-power AlGaN-based DUV LEDs. In this work, we fabricated AlGaN quantum well (QW) LEDs on Low TDD AlN template fabricated by epitaxial lateral overgrowth (ELO) method, and realized CW milliwatt power operation of AlGaN DUV-LED. First we grew initial AlN on c-plane sapphire substrate by using ammonia (NH3) pulse-flow multilayer (ML) growth method. After we formed 5/3μm AlN stripes on the initial AlN, we grew thick ELO-AlN layer. We fabricated the AlGaN-3QWs LED on the ELO-AlN. Intense 273nm emission peak was obtained from the AlGaN LED, and the maximum output power was 2.7mW, the maximum external quantum efficiency (EQE) was 0.04%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ELO-AlN / ammonia pulse-flow multilayer growth method / UV-LED / MOCVD |
| Paper # | ED2008-168,CPM2008-117,LQE2008-112 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates |
| Sub Title (in English) | |
| Keyword(1) | ELO-AlN |
| Keyword(2) | ammonia pulse-flow multilayer growth method |
| Keyword(3) | UV-LED |
| Keyword(4) | MOCVD |
| 1st Author's Name | Jun Norimatsu |
| 1st Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST() |
| 2nd Author's Name | Hideki Hirayama |
| 2nd Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST |
| 3rd Author's Name | Sachie Fujikawa |
| 3rd Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST |
| 4th Author's Name | Norimichi Noguchi |
| 4th Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST |
| 5th Author's Name | Takayoshi Takano |
| 5th Author's Affiliation | RIKEN:Panasonic Electric Works Co., Ltd |
| 6th Author's Name | Kenji Tsubaki |
| 6th Author's Affiliation | RIKEN:Panasonic Electric Works Co., Ltd |
| 7th Author's Name | Norihiko Kamata |
| 7th Author's Affiliation | Saitama University:Japan Science and Technology Agency, CREST |
| Date | 2008-11-27 |
| Paper # | ED2008-168,CPM2008-117,LQE2008-112 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |