| Presentation | 2008-11-27 Toward high-power operation of 230nm-band AlGaN UV-LED Norimichi NOGUCHI, Hideki HIRAYAMA, Jun NORIMATSU, Norihiko KAMATA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 210-350nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive light sources for the application to sterilization, medical fields etc. In this study, we realized high-power operations of AlGaN multi-quantum well (MQW) LEDs on high quality AlN/sapphire templates. We obtained significant increase of the 220nm-band emission from AlGaN MQW LEDs by reducing the quantum well thickness from 4nm to 1.5nm. We also introduced AlN electron blocking layer (EBL) in order to improve the electron injection efficiency by suppressing electron overflow. We revealed that the output power of the 250nm-band AlGaN LEDs was markedly increased by introducing AlN EBL. We obtained output power of 0.4mW and the external quantum efficiency (EQE) of 0.034% from 234nm AlGaN-MQW LED under room temperature (RT) continuous wave (CW) operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / UV-LEDs / MOCVD / electron blocking layer |
| Paper # | ED2008-167,CPM2008-116,LQE2008-111 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Toward high-power operation of 230nm-band AlGaN UV-LED |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | UV-LEDs |
| Keyword(3) | MOCVD |
| Keyword(4) | electron blocking layer |
| 1st Author's Name | Norimichi NOGUCHI |
| 1st Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST() |
| 2nd Author's Name | Hideki HIRAYAMA |
| 2nd Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST |
| 3rd Author's Name | Jun NORIMATSU |
| 3rd Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST |
| 4th Author's Name | Norihiko KAMATA |
| 4th Author's Affiliation | Saitama University:Japan Science and Technology Agency, CREST |
| Date | 2008-11-27 |
| Paper # | ED2008-167,CPM2008-116,LQE2008-111 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |