Presentation 2008-11-27
Control of substrate curvature during MOVOE growth of AlGaN
Yuya Ogawahara, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu,
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Abstract(in English) To achieve a devise superior in uniformity in plane, reduction technique of wafer bowing during growth is necessary. In this work, AlGaN was grown by MOVPE on different substrate, and in situ measurement of substrate curvature during growth. During AlGaN growth on GaN template and sapphire the substrate curvature increased, as a result wafer curve was large. While during growth on AlN template curvature decreased, and wafer curve was small. From this result, there is a possibility to be able to devices that is no wafer curve during growth of active layer by using AlN template which is larger lattice constant than AlGaN
Keyword(in Japanese) (See Japanese page)
Keyword(in English) curve / in situ / AlGaN / AlN / MOVPE
Paper # ED2008-165,CPM2008-114,LQE2008-109
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Committee LQE
Conference Date 2008/11/20(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Control of substrate curvature during MOVOE growth of AlGaN
Sub Title (in English)
Keyword(1) curve
Keyword(2) in situ
Keyword(3) AlGaN
Keyword(4) AlN
Keyword(5) MOVPE
1st Author's Name Yuya Ogawahara
1st Author's Affiliation Faculty of Eng., Mie University()
2nd Author's Name Mitsuhisa Narukawa
2nd Author's Affiliation Faculty of Eng., Mie University
3rd Author's Name Hideto Miyake
3rd Author's Affiliation Faculty of Eng., Mie University
4th Author's Name Kazumasa Hiramatsu
4th Author's Affiliation Faculty of Eng., Mie University
Date 2008-11-27
Paper # ED2008-165,CPM2008-114,LQE2008-109
Volume (vol) vol.108
Number (no) 323
Page pp.pp.-
#Pages 4
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