Presentation | 2008-11-27 Control of substrate curvature during MOVOE growth of AlGaN Yuya Ogawahara, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | To achieve a devise superior in uniformity in plane, reduction technique of wafer bowing during growth is necessary. In this work, AlGaN was grown by MOVPE on different substrate, and in situ measurement of substrate curvature during growth. During AlGaN growth on GaN template and sapphire the substrate curvature increased, as a result wafer curve was large. While during growth on AlN template curvature decreased, and wafer curve was small. From this result, there is a possibility to be able to devices that is no wafer curve during growth of active layer by using AlN template which is larger lattice constant than AlGaN |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | curve / in situ / AlGaN / AlN / MOVPE |
Paper # | ED2008-165,CPM2008-114,LQE2008-109 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2008/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Control of substrate curvature during MOVOE growth of AlGaN |
Sub Title (in English) | |
Keyword(1) | curve |
Keyword(2) | in situ |
Keyword(3) | AlGaN |
Keyword(4) | AlN |
Keyword(5) | MOVPE |
1st Author's Name | Yuya Ogawahara |
1st Author's Affiliation | Faculty of Eng., Mie University() |
2nd Author's Name | Mitsuhisa Narukawa |
2nd Author's Affiliation | Faculty of Eng., Mie University |
3rd Author's Name | Hideto Miyake |
3rd Author's Affiliation | Faculty of Eng., Mie University |
4th Author's Name | Kazumasa Hiramatsu |
4th Author's Affiliation | Faculty of Eng., Mie University |
Date | 2008-11-27 |
Paper # | ED2008-165,CPM2008-114,LQE2008-109 |
Volume (vol) | vol.108 |
Number (no) | 323 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |