| Presentation | 2008-11-27 Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells Mitsuru FUNATO, Keita HAYASHI, Masaya UEDA, Yoichi KAWAKAMI, Yukio NARUKAWA, Takashi MUKAI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate that the apparent emission colors of InGaN-based LEDs using micro-structured multifacet quantum wells as active layers can externally be controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000K to blue along the Planckian locus. The controllability relies on facet-dependent polychromatic emissions. The pulsed current operation with the appropriate duties varied their relative intensities and the consequent apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to green variation. The proposed LEDs can be fabricated through a simple process and, therefore, may be a key device for advanced SSL. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN/GaN quantum wells / multi-facetted structures / LEDs / color-tunable LEDs |
| Paper # | ED2008-164,CPM2008-113,LQE2008-108 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells |
| Sub Title (in English) | |
| Keyword(1) | InGaN/GaN quantum wells |
| Keyword(2) | multi-facetted structures |
| Keyword(3) | LEDs |
| Keyword(4) | color-tunable LEDs |
| 1st Author's Name | Mitsuru FUNATO |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Keita HAYASHI |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Masaya UEDA |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Yoichi KAWAKAMI |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 5th Author's Name | Yukio NARUKAWA |
| 5th Author's Affiliation | Nichia Corporation, Nitride Semiconductor Research Lab. |
| 6th Author's Name | Takashi MUKAI |
| 6th Author's Affiliation | Nichia Corporation, Nitride Semiconductor Research Lab. |
| Date | 2008-11-27 |
| Paper # | ED2008-164,CPM2008-113,LQE2008-108 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |