Presentation 2008-11-27
Ultrathin InN/(In)GaN quantum well structure for a new active layer of blue-green light emitter
Songbek CHE, Akihiko YUKI, Hiroshi WATANABE, Yoshihiro ISHITANI, Akihiko Yoshikawa,
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Abstract(in English) 1 monolayer (ML) thick InN quantum well (QW) with InGaN barrier grown by radio-frequency plasma assisted molecular beam epitaxy (rf-MBE) is proposed for a new active layer of blue-green light emitters. Compared with previously reported 1ML thick InN/GaN QWs, extended emission wavelength up to pure green region (~530nm) is expected for these QWs with InGaN barriers. It is found that for the InN/InGaN QW structure, in which the InGaN layer is used as a barrier instead of GaN, very thin InN well layers are basically formed in the same manner as the InN/GaN QWs. Bluish-green emission is observed in the QW light-emitting diode (LED) and no blue shift is observed in electroluminescence spectra from the LED for various current levels, indicating an enhancement in the quantum efficiency by inserting the ultrathin InN well leading to suppression of the quantum confined Stark effect.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InN / Ultrathin quantum well / Light-emitting diodes / Quantum-confined Stark effect (QCSE)
Paper # ED2008-163,CPM2008-112,LQE2008-107
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Conference Information
Committee LQE
Conference Date 2008/11/20(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ultrathin InN/(In)GaN quantum well structure for a new active layer of blue-green light emitter
Sub Title (in English)
Keyword(1) InN
Keyword(2) Ultrathin quantum well
Keyword(3) Light-emitting diodes
Keyword(4) Quantum-confined Stark effect (QCSE)
1st Author's Name Songbek CHE
1st Author's Affiliation Graduate School of Electrical and Electronic Engineering, Chiba University()
2nd Author's Name Akihiko YUKI
2nd Author's Affiliation Graduate School of Electrical and Electronic Engineering, Chiba University
3rd Author's Name Hiroshi WATANABE
3rd Author's Affiliation Graduate School of Electrical and Electronic Engineering, Chiba University
4th Author's Name Yoshihiro ISHITANI
4th Author's Affiliation Graduate School of Electrical and Electronic Engineering, Chiba University
5th Author's Name Akihiko Yoshikawa
5th Author's Affiliation Graduate School of Electrical and Electronic Engineering, Chiba University
Date 2008-11-27
Paper # ED2008-163,CPM2008-112,LQE2008-107
Volume (vol) vol.108
Number (no) 323
Page pp.pp.-
#Pages 5
Date of Issue