Presentation 2008-11-27
Achieving P-type InN and Its Characterization : Present Status and Future Prospects
Akihiko YOSHIKAWA, Xinqiang WANG, Songbek CHE, Yoshihiro ISHITANI,
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Abstract(in English) Successful p-type doping of InN up to the net acceptor concentration of ~3x10^<19>cm^<-3> has been confirmed by analyzing electrolyte capacitance-voltage characteristics (ECV) for Mg-doped InN samples grown by MBE. It was found that overdoped [Mg] introduce shallow donors in InN resulting in the conduction type change into n-type again. Electrical, optical and crystalline-structural properties of Mg-doped InN samples, in which [Mg] concentration was very widely varied in the range from 10^<16> to 4x10^<21>cm^<-3>, were also investigated. Present status and future prospects as well as some related problems for achieving p-type InN are discussed in this paper.
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Keyword(in English) P-type InN / Mg-doped InN / Mg-overdoping / III-V nitrides / MBE / ECV
Paper # ED2008-162,CPM2008-111,LQE2008-106
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Conference Information
Committee LQE
Conference Date 2008/11/20(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Achieving P-type InN and Its Characterization : Present Status and Future Prospects
Sub Title (in English)
Keyword(1) P-type InN
Keyword(2) Mg-doped InN
Keyword(3) Mg-overdoping
Keyword(4) III-V nitrides
Keyword(5) MBE
Keyword(6) ECV
1st Author's Name Akihiko YOSHIKAWA
1st Author's Affiliation Graduate School of Electrical and Electronic Engineering()
2nd Author's Name Xinqiang WANG
2nd Author's Affiliation Graduate School of Electrical and Electronic Engineering
3rd Author's Name Songbek CHE
3rd Author's Affiliation Graduate School of Electrical and Electronic Engineering
4th Author's Name Yoshihiro ISHITANI
4th Author's Affiliation Graduate School of Electrical and Electronic Engineering
Date 2008-11-27
Paper # ED2008-162,CPM2008-111,LQE2008-106
Volume (vol) vol.108
Number (no) 323
Page pp.pp.-
#Pages 6
Date of Issue