| Presentation | 2008-11-27 A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-cavity Masao KAWAGUCHI, Satoshi TAMURA, Masaaki YURI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A GaN-based Surface-emitting laser was realized by total internal reflection (TIR) using an inclined mirror formed at one end of the horizontal cavity of an edge-emitting laser. A surface-emitting light output exceeding 10mW was obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / surface-emitting laser / inclined-mirror |
| Paper # | ED2008-160,CPM2008-109,LQE2008-104 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-cavity |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | surface-emitting laser |
| Keyword(3) | inclined-mirror |
| 1st Author's Name | Masao KAWAGUCHI |
| 1st Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation() |
| 2nd Author's Name | Satoshi TAMURA |
| 2nd Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| 3rd Author's Name | Masaaki YURI |
| 3rd Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| Date | 2008-11-27 |
| Paper # | ED2008-160,CPM2008-109,LQE2008-104 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |