Presentation | 2008-11-27 Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region Tohru HONDA, Shigetoshi KOMIYAMA, Yoshihiro MASHIYAMA, Kenji WATANABE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The reduction of reverse-bias leakage current in GaN-based Schottky diodes was investigated using an aluminum facepack technique, which resulted in a decrease in the reverse-bias current. The large reverse-bias current was reduced by the facepack technique. This is due to the mask effect of the facepack reducing the number of dislocation-related leakage current paths. The reduction leads to the enhancement of quantum efficiency in Schottky-type light-emitting diodes (ST-LEDs). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / LED / UV / reverse-bias current |
Paper # | ED2008-159,CPM2008-108,LQE2008-103 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2008/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | LED |
Keyword(3) | UV |
Keyword(4) | reverse-bias current |
1st Author's Name | Tohru HONDA |
1st Author's Affiliation | Faculty of Engineering, Kogakuin University() |
2nd Author's Name | Shigetoshi KOMIYAMA |
2nd Author's Affiliation | Faculty of Engineering, Kogakuin University |
3rd Author's Name | Yoshihiro MASHIYAMA |
3rd Author's Affiliation | Faculty of Engineering, Kogakuin University |
4th Author's Name | Kenji WATANABE |
4th Author's Affiliation | Faculty of Engineering, Kogakuin University |
Date | 2008-11-27 |
Paper # | ED2008-159,CPM2008-108,LQE2008-103 |
Volume (vol) | vol.108 |
Number (no) | 323 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |