Presentation 2008-11-27
Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region
Tohru HONDA, Shigetoshi KOMIYAMA, Yoshihiro MASHIYAMA, Kenji WATANABE,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The reduction of reverse-bias leakage current in GaN-based Schottky diodes was investigated using an aluminum facepack technique, which resulted in a decrease in the reverse-bias current. The large reverse-bias current was reduced by the facepack technique. This is due to the mask effect of the facepack reducing the number of dislocation-related leakage current paths. The reduction leads to the enhancement of quantum efficiency in Schottky-type light-emitting diodes (ST-LEDs).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / LED / UV / reverse-bias current
Paper # ED2008-159,CPM2008-108,LQE2008-103
Date of Issue

Conference Information
Committee LQE
Conference Date 2008/11/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region
Sub Title (in English)
Keyword(1) GaN
Keyword(2) LED
Keyword(3) UV
Keyword(4) reverse-bias current
1st Author's Name Tohru HONDA
1st Author's Affiliation Faculty of Engineering, Kogakuin University()
2nd Author's Name Shigetoshi KOMIYAMA
2nd Author's Affiliation Faculty of Engineering, Kogakuin University
3rd Author's Name Yoshihiro MASHIYAMA
3rd Author's Affiliation Faculty of Engineering, Kogakuin University
4th Author's Name Kenji WATANABE
4th Author's Affiliation Faculty of Engineering, Kogakuin University
Date 2008-11-27
Paper # ED2008-159,CPM2008-108,LQE2008-103
Volume (vol) vol.108
Number (no) 323
Page pp.pp.-
#Pages 4
Date of Issue