Presentation 2008-11-27
Growth and Characterization of M-plane InN on LiAlO_2 Substrate by RF-MBE
Yusuke TAKAGI, Hirokazu NOZAWA, Tomohiro YAMAGUCHI, Tsutomu ARAKI, Yasushi NANISHI,
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Abstract(in English) In this study, we report the growth and characterization of M-plane InN films on LiAlO_2 (100) substrates by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). InN films were grown directly on the substrate. Pure M-plane InN was successfully grown at 450℃ and under slightly In-rich condition. However, the incorporation of C-plane InN phases were confirmed in M-plane InN films at low temperature or under N-rich condition. Therefore, it is important to control the growth temperature and V/III ratio for the growth of pure M-plane InN. We also characterized the microstructure of the pure M-plane InN on LiAlO_2 (100) by using transmission electron microscopy (TEM).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InN / non-polar / MBE / LiAlO_2 / TEM
Paper # ED2008-157,CPM2008-106,LQE2008-101
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Committee LQE
Conference Date 2008/11/20(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth and Characterization of M-plane InN on LiAlO_2 Substrate by RF-MBE
Sub Title (in English)
Keyword(1) InN
Keyword(2) non-polar
Keyword(3) MBE
Keyword(4) LiAlO_2
Keyword(5) TEM
1st Author's Name Yusuke TAKAGI
1st Author's Affiliation Dept. of Photonics, Ritsumeikan University()
2nd Author's Name Hirokazu NOZAWA
2nd Author's Affiliation Dept. of Photonics, Ritsumeikan University
3rd Author's Name Tomohiro YAMAGUCHI
3rd Author's Affiliation Res. Org. of Sci. & Eng., Ritsumeikan University
4th Author's Name Tsutomu ARAKI
4th Author's Affiliation Dept. of Photonics, Ritsumeikan University
5th Author's Name Yasushi NANISHI
5th Author's Affiliation Dept. of Photonics, Ritsumeikan University
Date 2008-11-27
Paper # ED2008-157,CPM2008-106,LQE2008-101
Volume (vol) vol.108
Number (no) 323
Page pp.pp.-
#Pages 4
Date of Issue